Results 21 to 30 of about 342 (172)
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ...
Jo-Han Hung +5 more
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Nanoscale Research Letters, 2021 A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated ...
Xiaoshi Jin +5 more
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IEEE Journal of the Electron Devices Society, 2015 A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
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Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]
Adv MaterHfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zhou Z +9 more
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Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Micromachines, 2018 Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang +3 more
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Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016 An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu +5 more
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Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design [PDF]
Semiconductor Science and Technology, 2019 Abstract In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area.
Ahmed Shaker +4 more
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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Nanoscale Research Letters, 2020 Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang +4 more
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IET Circuits, Devices and Systems, 2021 In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double ...
Ria Bose, Jatindra Nath Roy
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Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]
Journal of Electrical and Computer Engineering Innovations, 2018 Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
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