Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM [PDF]
Discover NanoIn this study, we designed and analyzed a single-transistor dynamic random-access memory (1 T-DRAM) based on an arch-shaped gate-all-around tunnel field-effect transistor (GAA ARCH-TFET), featuring an Si/SiGe heterostructure, for high-density memory ...
Seung Ji Bae +9 more
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In-Line Tunnel Field Effect Transistor: Drive Current Improvement
IEEE Journal of the Electron Devices Society, 2018 A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
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Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Nature Communications, 2023 Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhongyunshen Zhu +2 more
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High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
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FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design [PDF]
Discover NanoIn this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
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Study of dielectric modulated dual source triple gate TFET for biosensing applications [PDF]
Discover NanoA dielectric modulated dual-source triple-gate tunnel field effect transistor (DM-DSTG TFET) based biosensor is proposed for the detection of biomolecules, the performance of the proposed biosensor was rigorously evaluated using the Silvaco Atlas ...
Guowei Cui, Huifang Xu
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Advancing the Frontiers of HfO2‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications [PDF]
Advanced Materials, Volume 37, Issue 50, December 17, 2025.HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou +9 more
wiley +2 more sources
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor [PDF]
Journal of Optoelectronical Nanostructures, 2020 : In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET)
Zahra Ahangari
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Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power [PDF]
Discover NanoNanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet ...
Jyi-Tsong Lin, Chia-Yo Kuo
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