Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) [PDF]
IEEE Access, 2020 A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS ...
Jang Woo Lee, Woo Young Choi
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Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET) [PDF]
Micromachines, 2019 Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and ...
Hwa Young Gu, Sangwan Kim
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High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
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Study of dielectric modulated dual source triple gate TFET for biosensing applications [PDF]
Discover NanoA dielectric modulated dual-source triple-gate tunnel field effect transistor (DM-DSTG TFET) based biosensor is proposed for the detection of biomolecules, the performance of the proposed biosensor was rigorously evaluated using the Silvaco Atlas ...
Guowei Cui, Huifang Xu
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Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power [PDF]
Discover NanoNanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet ...
Jyi-Tsong Lin, Chia-Yo Kuo
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Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor [PDF]
Journal of Optoelectronical Nanostructures, 2020 : In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET)
Zahra Ahangari
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Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) [PDF]
Nano Convergence, 2016 The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption.
Choi, Woo Young, Lee, Hyun Kook
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Graphene antidot nanoribbon tunnel field‐effect transistor
Micro & Nano Letters, 2022 A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
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Discover Nano, 2023 This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel
Dariush Madadi, Saeed Mohammadi
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