Results 31 to 40 of about 725 (202)
Nanoscale Research Letters, 2021 A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated ...
Xiaoshi Jin +5 more
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Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Micromachines, 2018 Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang +3 more
doaj +1 more source
Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2016 An analytical compact model for tunnel field-effect transistor (TFET) circuit simulation is extended by adding a gate tunnel current model, a charge-based capacitor model, and a noise model. The equation set is broadly applicable across materials systems
Hao Lu +5 more
doaj +1 more source
IOP Conference Series: Materials Science and Engineering, 2021 Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias and behaves like a transistor due to tunnelling mechanism
P Shilla, V Verma, R Kumar, A Kumar
openaire +1 more source
Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Nanoscale Research Letters, 2020 Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang +4 more
doaj +1 more source
IET Circuits, Devices and Systems, 2021 In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double ...
Ria Bose, Jatindra Nath Roy
doaj +1 more source
Tunnel field effect transistor (TFET) with lateral oxidation
, 2011 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
core +1 more source
Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]
Journal of Electrical and Computer Engineering Innovations, 2018 Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj +1 more source
Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
, 2011 This study presents a new sub-10-nm tunnel field-effect transistor (TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ensure a near ...
Chun-Hsing Shih +1 more
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, 2021 Background: Power reduction is a serious design concern for submicron logic circuits, which can be achieved by scaling the supply voltage. Modern Field Effect Transistor (FET) circuits require at least 60 mV of gate voltage for better current drive at ...
Singh, Ajay Kumar, Tan, Chun Fui
core +1 more source