Results 51 to 60 of about 342 (172)
Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
IEEE Access, 2018 In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin +2 more
doaj +1 more source
Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo +3 more
wiley +1 more source
IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.This paper presents a novel architecture the diagonal tunneling dielectrically modulated tunnel field effect transistor (DT‐DMTFET) for label‐free biosensing applications. The study employs TCAD (Silvaco TCAD) simulations to comprehensively analyze the behavior of the DT‐DMTFET biosensor focusing on key parameters such as drain current, sub‐threshold ...
I. Rama Satya Nageswara Rao +2 more
wiley +1 more source
TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
IEEE Journal of the Electron Devices Society, 2019 A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu +2 more
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Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
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Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu +5 more
wiley +1 more source
Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
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Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo +2 more
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Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
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Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin +4 more
wiley +1 more source