Results 71 to 80 of about 725 (202)
Effect of metal work function of asymmetric dielectric tunnel FET on its performance
, 2021 In the present era, with the advancement of various non-conventional devices, hardware components dimensions are shrinking to great extent. Among those, significant part of researchers focus is drawn by Tunnel Field Effect Transistors (TFETs), because of
N. K. Niranjan +5 more
core +1 more source
Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin +4 more
wiley +1 more source
Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor
, 2019 In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD ...
Jaehong Lee, Garam Kim, Sangwan Kim
core +1 more source
, 2020 A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed.
Lee, Jang Woo, Choi, Woo Young
core +1 more source
Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEurope, Volume 3, Issue 6, November 11, 2025.Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
wiley +1 more source
Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy
Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou +4 more
wiley +1 more source
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj +1 more source
DESIGN OF SI/SIGE HETEROJUNCTION LINE TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH HIGH-K DIELECTRIC
, 2020 In this paper we propose a Si/SiGe heterojunction line tunnel field effect transistor (TFET) with high-K dielectric. The main objective of this device is to increase the ON current. In the case of Si TFETs the ON current is very low.
Flavia Princess +3 more
core
Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction
, 2020 [[abstract]]This study presents a new sub-10-nm tunnel field-effect transistor ( TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ...
Shih, CH, 施君興
core +1 more source
Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors
Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.Using a first‐principles quantum transport approach, the intrinsic transport properties of 2D BX (X = P, As, Sb) materials are investigated. These materials exhibit high on‐currents and excellent ambipolar symmetry in MOSFET configurations, and break the Boltzmann limit of subthreshold swing in TFETs while maintaining high and symmetric bipolar ...
Shuai Lang +4 more
wiley +1 more source