Results 71 to 80 of about 15,872,036 (205)
A silicon nanocrystal tunnel field effect transistor [PDF]
, 2014 : In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon
Michel Pioro-Ladrière +5 more
core +1 more source
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)
IEEE Journal of the Electron Devices Society, 2015 Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) of ...
Li, Mingda +4 more
openaire +3 more sources
Smart Nanoelectronics: Integrating AI and ML in Materials Design and Nanoscale Device Optimisation
Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.The paper discusses how the complexity of nanoelectronic systems has outpaced traditional modelling and experimental methods, making AI and ML essential tools for handling the large design space and nonlinear behaviours involved. It highlights how these technologies are being used for predictive modelling, material discovery, synthesis optimisation ...
Yashu Swami
wiley +1 more source
Ultra low power circuits design based on III-V group heterojunction tunnel field effect transistor
, 2015 With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthreshold Swing(SS) is limited by the thermal theory to 60mV/dec. Tunnel field effect transistors based on BTBT have slope Subthreshold Swing and can be used
Xin'an Wang +7 more
core +1 more source
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj +1 more source
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu +5 more
wiley +1 more source
, 2020 A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed.
Lee, Jang Woo, Choi, Woo Young
core +1 more source
Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo +2 more
wiley +1 more source
Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Applied Sciences, 2018 In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani +4 more
doaj +1 more source
Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin +4 more
wiley +1 more source