Results 131 to 140 of about 2,562 (186)

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +1 more source

Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study. [PDF]

ACS Omega
Zhang S, Guo Z, Shen Q, Du S, Xie H, Yin WY.   +5 more
europepmc   +1 more source

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Junctionless Tunnel Field Effect Transistor

IEEE Electron Device Letters, 2013
In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor ...
Bahniman Ghosh
exaly   +2 more sources

Resonant tunneling field-effect transistors

Superlattices and Microstructures, 1988
We report an experimental project to incorporate double-barrier tunnel structures into three-terminal devices. These devices have the negative-differential-resistance (NDR) features of the double barrier, and the added flexibility of a third controlling electrode.
T.K. Woodward, T.C. McGill, R.D. Burnham, H.F. Chung   +3 more
openaire   +1 more source

Vertical Tunnel Field-Effect Transistor

IEEE Transactions on Electron Devices, 2004
The realization of a novel vertically grown tunnel field-effect transistor (FET) with several interesting properties is presented. The operation of the device is shown by means of both experimental results as well as two-dimensional computer simulations. This device consists of a MBE-grown, vertical p-i-n structure. A vertical gate controls the band-to-
K.K. Bhuwalka, S. Sedlmaier, A.K. Ludsteck, C. Tolksdorf, J. Schulze, I. Eisele   +5 more
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Tunnel field-effect transistors - update

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
Progress in the development of tunnel field-effect transistors (TFETs) is updated. Selected experimental demonstrations and simulations of sub-60-mV/decade TFETs are compared. A universal SPICE model is discussed which allows the unique attributes of the TFET to be represented across material systems and gate geometries to enable circuit design, with ...
Alan Seabaugh, Hao Lu
openaire   +1 more source

SiGe Tunnel Field Effect Transistors

ECS Transactions, 2008
For conventional MOSFETs band-to-band tunnelling has to be avoided because it causes unintentional leakage currents. On the other hand the Tunnel FET, which basically consists of a gated pin-diode, takes advantage of tunnelling. The influence of technological parameters on device performance as well as scaling rules will be discussed.
Ignaz Eisele, Helmut Lochner, Martin Schlosser   +2 more
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Si Tunneling Field Effect Transistor with Tunnelling In-Line with the Gate Field

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012
The tunneling field effect transistor (TFET) is a device concept that has the potential to outperform CMOS technology both in energy efficiency and speed. One of the challenges for this device concept is to improve on-currents to meet industry standards.
I. A. Fischer, D. Hahnel, H. Isemann, A. Kottantharayil, G. Murali, M. Oehme, J. Schulze   +6 more
openaire   +1 more source