Results 141 to 150 of about 1,639 (228)

The Dimensional Revolution of Phosphorus: From Allotropicity to Battery System Applications

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 5, September 2026.
Phosphorus‐based materials are promising high‐capacity anodes classified by dimension (0D–3D) to systematically explore their properties and composite strategies. When combined with materials such as carbon to form heterostructures, the electrical conductivity and stability are effectively enhanced.
Shuhan Zhang, Zhiyuan Zhang, Ziying Pan, Kaixuan Hu, Yameng Yin, Yapan Wu, Caihong Yang, Lei Zheng, Dongsheng Li   +8 more
wiley   +1 more source

Transistor‐Based Bio‐Hybrid Artificial Afferent Nerves for a Mainly Bio‐Composite Reflex Arc System

SmartSys, Volume 2, Issue 3, September 2026.
ABSTRACT The development of sustainable high‐performance bio‐hybrid neuromorphic electronics is essential for the next generation of intelligent human–machine interfaces. However, achieving systemic biocompatibility while maintaining low power consumption and long‐term stability remains a formidable challenge.
Yumo Zhang, Yao Ni, Guokun Liang, Zhuohao Lin, Xiaoen Chen, Yayi Chen, Lu Yang, Hang Yu, Wei Zhong, Yuan Liu   +9 more
wiley   +1 more source

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh, Alessandro Puddu, Slawomir Prucnal, Sebastian Lehmann, Kornelius Nielsch, Yordan M. Georgiev, Ahmad Echresh, Artur Erbe   +7 more
wiley   +1 more source

Observation of Excitonic Instability in a Monolayer Ta2NiSe5 With Strain Disorder

Advanced Science, Volume 13, Issue 43, 3 August 2026.
Monolayer Ta2${\rm Ta}_2$NiSe5${\rm NiSe}_5$ sustains an excitonic insulating phase up to 190 K, with Raman signatures of gap opening and critical excitonic fluctuations. Thickness‐independent large gap ratios highlight strong exciton‐phonon coupling, while substrate‐induced strain disorder depresses Tc, establishing monolayer Ta2${\rm Ta}_2$NiSe5${\rm
So Young Kim, Kwangrae Kim, Dowook Kim, Ji Eun Lee, Jieun Seok, Chang Il Kwon, Jo Hyun Yun, Chang‐Jong Kang, Jae Hoon Kim, H. W. Yeom, Tae‐Hwan Kim, Jonghwan Kim, B. J. Kim, Jun Sung Kim   +13 more
wiley   +1 more source

Charge Transport in All‐Inorganic CuInSe2 Nanocrystal Transistors: Linking Material Design and Device Performance

Advanced Electronic Materials, Volume 12, Issue 15, 10 August 2026.
This work explores how colloidal CuInSe2 nanocrystals form functional field‐effect transistors when their native ligands are replaced with short inorganic species that promote charge transport. By systematically adjusting nanocrystal dimensions, surface treatments, film characteristics, and device architecture, the study maps the resulting electronic ...
Nadia Günther, Borja Rodriguez‐Barea, Jasmin L. Herzog, Bjarne E. Stern, Alexandre Ansieau, Angelika Wrzesinska‐Lashkova, Yana Vaynzof, Artur Erbe, Alexander Eychmüller   +8 more
wiley   +1 more source

Bio-inspired cross-modal super-additive plasticity for seamless visual processing-in-sensory and -in-memory. [PDF]

Nat Commun
Xiong X, Fu T, Gu C, Li Q, Liu H, Wang X, Kang J, Liu S, Wang Y, Li D, Wang X, Pan A, Wu Y.   +12 more
europepmc   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source

Self‐Powered ZnSnN2/GaN Photodiodes via Fine Stoichiometry Control and Photon Trapping Micropatterned Heterojunctions Under Low‐Light Irradiation

Small Structures, Volume 7, Issue 8, August 2026.
We demonstrate a high performance self‐powered photodiode based on a ZnSnN2/GaN heterostructure. Through precise stoichiometric control, we enhanced the built‐in electric field for efficient charge separation. Additionally, light‐trapping micropatterned heterojunctions significantly improved light absorption and carrier lifetime.
Jeong Hyeon Kim, Ju Chan Hwang, Soon Joo Yoon, Yoon Kyueng Lee, Taehun Lee, Jungwook Min, Jongmin Kim, Kwangwook Park, Haneol Lee   +8 more
wiley   +1 more source

Intrinsic annealing in a hybrid memristor-magnetic tunnel junction Ising machine. [PDF]

Nat Commun
Iftakher MA, Levices H, Harabi KE, Renaudineau A, Faye MC, Bouchard C, Disdier F, Viala B, Vianello E, Talatchian P, Garello K, Querlioz D, Hutin L.   +12 more
europepmc   +1 more source