Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power [PDF]
Discover NanoNanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet ...
Jyi-Tsong Lin, Chia-Yo Kuo
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Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor [PDF]
Журнал нано- та електронної фізики, 2017 This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device.
ManjulaВ Vijh +2 more
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Applied Sciences, 2020 In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation.
Seung-Hyun Lee +5 more
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Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]
Journal of Optoelectronical Nanostructures, 2022 In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand +2 more
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Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor [PDF]
Micromachines, 2019 Junsu Yu, Sangwan Kim, Donghyun Ryu
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Graphene antidot nanoribbon tunnel field‐effect transistor
Micro & Nano Letters, 2022 A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
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Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter
IEEE Journal of the Electron Devices Society, 2021 In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters.
Hyun Woo Kim, Daewoong Kwon
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IET Circuits, Devices and Systems, 2021 This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material
Satyendra Kumar
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Tunnel field-effect transistors for sensitive terahertz detection [PDF]
Nature Communications, 2021 AbstractThe rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires ...
I. Gayduchenko +11 more
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Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
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