Results 41 to 50 of about 2,562 (186)

Complementary Black Phosphorus Tunneling Field-Effect Transistors [PDF]

ACS Nano, 2018
Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low-power integration circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) and have been demonstrated to overcome the thermionic limit, which results intrinsically in sub-threshold swings of at least 60 mV/dec at room ...
Peng Wu, Tarek Ameen, Huairuo Zhang, Leonid A. Bendersky, Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman, Albert V. Davydov, Joerg Appenzeller   +8 more
openaire   +2 more sources

Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

IEEE Journal of the Electron Devices Society, 2020
Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka   +2 more
doaj   +1 more source

Silicon spin diffusion transistor: materials, physics and device characteristics

, 2005
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C, C.V. Tiusan, Gregg, John, S.M. Thompson, Ensell, G, Thompson, SM, Thompson, S M, Gregg, J F, Dennis, CL, Tiusan, CV, Ensell, GJ, Gregg, JF, C.L. Dennis, J.F. Gregg, G.J. Ensell, Dennis, C L   +15 more
core   +1 more source

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction

, 2011
This study presents a new sub-10-nm tunnel field-effect transistor (TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ensure a near ...
Chun-Hsing Shih, Nguyễn, Đăng Chiến   +1 more
core   +1 more source

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Nanomaterials, 2019
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field ...
Hongliang Lu, Bin Lu, Yuming Zhang, Yimen Zhang, Zhijun Lv   +4 more
doaj   +1 more source

Simulation of Dual-Material Hetero-Double Gate Tunnel Field Effect Transistor (TFET) in Sub-Micron Region

Journal of Engineering Technology and Applied Physics, 2023
To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
doaj   +1 more source

Tunnel field-effect transistor without gate-drain overlap

, 2007
Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit.
Vandenberghe, William, Groeseneken, Guido, Guido Groeseneken, William G. Vandenberghe, Karen Maex, Anne S. Verhulst, Maex, Karen, Verhulst, Anne   +7 more
core   +1 more source

Tunnel field-effect transistors with graphene channels

, 2022
S.279-284The lack of an OFF-state has been the main obstacle to the application of graphene-based transistors in digital circuits. Recently vertical graphene tunnel field-effect transistors with a low OFF-state current have been reported; however, they ...
Lukichev, V.F., Orlikovsky, A.A., Svintsov, D.A., Burenkov, A., Vyurkov, V.V., Oechsner, R.   +5 more
core   +1 more source

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

IEEE Journal of the Electron Devices Society, 2016
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck, Zhihong Chen, Rajib Rahman   +4 more
doaj   +1 more source

Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis

IEEE Journal of the Electron Devices Society, 2015
A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj   +1 more source