Results 51 to 60 of about 2,562 (186)

Uniform Strain in Heterostructure Tunnel Field-Effect Transistors [PDF]

IEEE Electron Device Letters, 2016
Strain can strongly impact the performance of III–V tunnel field-effect transistors (TFETs). However, previous studies on homostructure TFETs have found an increase in ON-current to be accompanied with a degradation of subthreshold swing. We perform 30-band quantum mechanical simulations of staggered heterostructure p-n-i-n TFETs submitted to uniaxial ...
Devin Verreck, Anne S. Verhulst, Maarten L. Van de Put, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken   +7 more
openaire   +1 more source

Tunnel field effect transistor (TFET) with lateral oxidation

, 2011
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
core   +1 more source

Nanoscale tunnel field-effect transistor based on a complex-oxide lateral heterostructure [PDF]

, 2019
We demonstrate a tunnel field-effect transistor based on a lateral heterostructure patterned from an LaAlO3/SrTiO3 electron gas. Charge is injected by tunneling from the LaAlO3/SrTiO3 contacts and the current through a narrow channel of insulating SrTiO3
Şahin, C., Fuhrmann, B., Minhas, M.Z., Schmidt, OG, Müller, A., Flatté, M.E., Minhas, M Z, Fuhrmann, B, Schmidt, G., Müller, A, Flatté, ME Michael, Şahin, C   +11 more
core   +1 more source

Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling

, 2017
Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies.
Chun-Hsing Shih, Nguyễn, Đăng Chiến, Ting-Shiuan Kang, Hung-Jin Teng, Yu-Hsuan Chen   +4 more
core   +1 more source

FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design

Discover Nano
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj   +1 more source

In-plane tunnelling field-effect transistor integrated on Silicon [PDF]

Scientific Reports, 2015
AbstractSilicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto ...
Fina, Ignasi, Apachitei, Geanina, Preziosi, Daniele, Deniz, Hakan, Kriegner, Dominik, Martí Rovirosa, Xavier, Alexe, Marin   +6 more
openaire   +4 more sources

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor [PDF]

IEEE Transactions on Electron Devices, 2012
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer.
Zhao, Pei, Feenstra, Randall M., Gu, Gong, Jena, Debdeep   +3 more
openaire   +2 more sources

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [PDF]

Science, 2012
Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there is also an effective way of creating a barrier to current flow so that the device can be switched off and not waste power.
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., Peres, N. M. R., Leist, J., Geim, A. K., Novoselov, K. S., Ponomarenko, L. A.   +14 more
openaire   +7 more sources

A binary tunnel field effect transistor with a steep sub-threshold swing and increased ON current

, 2010
A variant tunnel field effect transistor structure called the binary tunnel field effect transistor (BTFET) for low voltage and near ideal switching characteristics is proposed.
Kota V. R. M. Murali, Murali, Kota V. R. M., Ramgopal Rao, V., Asra, Ram, Ram Asra, V. Ramgopal Rao   +5 more
core   +1 more source

Numerical Study on Dual Material Gate Nanowire Tunnel Field-Effect Transistor

, 2012
A numerical study on the characteristics of dualmaterial gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper.
Zhang, Lining, He, Hongyu, Mei, Jinhe, Chan, Mansun, He, Jin, Zhang, Aixi   +5 more
core   +1 more source