Results 71 to 80 of about 2,562 (186)
Compact Model for L-Shaped Tunnel Field-Effect Transistor Including the 2D Region
Applied Sciences, 2019 The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET.
Faraz Najam, Yun Seop Yu
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Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications
IEEE Journal of the Electron Devices Society, 2017 RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
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Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor [PDF]
Journal of Optoelectronical Nanostructures, 2020 : In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET)
Zahra Ahangari
doaj
Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review
Sensing and Bio-Sensing ResearchA thorough investigation into the development and performance assessment of biosensors that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from conventional bio-sensing approaches is carried out.
M. Poorna Sundari, G. Lakshmi Priya
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Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2014 This study presents a new asymmetric junctionless tunnel field-effect transistor (AJ-TFET) to scale TFETs into sub-10-nm regimes. The asymmetric junctionless p+ source/body and junctional n/p+ drain/body separately optimize the lateral source and drain ...
Chun-Hsing Shih, Nguyen Van Kien
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, 2012 A nanoscaled multilayered composite structure made of a ferroelectric tunnel capacitor attached to a magnetic sensor layer is studied using a Landau-Ginzburg thermodynamic model.
Y. Zheng +5 more
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, 2021 Background: Power reduction is a serious design concern for submicron logic circuits, which can be achieved by scaling the supply voltage. Modern Field Effect Transistor (FET) circuits require at least 60 mV of gate voltage for better current drive at ...
Singh, Ajay Kumar, Tan, Chun Fui
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Electronic transport, field effect and doping in pentacene nanorods and monolayer thin film prepared by combination of nano-fabrication and self-assembly [PDF]
, 2008 The transport in organic semiconductors is investigated on the nanometer scale. Field effect transistor with device-active layers in the monolayer (ML) range are characterized in-situ right after the controlled deposition of pentacene.
Vanoni, Claudio
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, 2004 This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains.
Wu NJ +2 more
core
Bi-layer pseudo-spin field-effect transistor [PDF]
, 2009 A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by
Palle, Dharmendar Reddy +4 more
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