Results 81 to 90 of about 2,562 (186)

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Nature Communications
The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic ...
Guangdi Feng, Yifei Liu, Qiuxiang Zhu, Zhenyu Feng, Shengwen Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair, Ke Qu, Chang Yang, Shenglan Hao, Fangyu Yue, Chungang Duan, Junhao Chu, Bobo Tian   +16 more
doaj   +1 more source

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. [PDF]

Micromachines (Basel), 2023
Shan C, Liu Y, Liu Y, Wang Y, Cai R, Su L.   +5 more
europepmc   +1 more source

Roles of Gate-Oxide Thickness Reduction in Scaling Bulk and Thin-Body Tunnel Field-Effect Transistors

, 2017
Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body ...
Chun-Hsing Shih, Shih, Chun-Hsing, Anh, Dao Thi Kim, Nguyễn, Đăng Chiến, Chien, Nguyen Dang, Nguyen Dang Chien, Dao Thi Kim Anh   +6 more
core   +1 more source

Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction

, 2020
[[abstract]]This study presents a new sub-10-nm tunnel field-effect transistor ( TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ...
Shih, CH, 施君興 
core   +1 more source

Ultra low power circuits design based on III-V group heterojunction tunnel field effect transistor

, 2015
With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthreshold Swing(SS) is limited by the thermal theory to 60mV/dec. Tunnel field effect transistors based on BTBT have slope Subthreshold Swing and can be used
Xin'an Wang, Gao, Fang, Fang Gao, Jipan Huang, Chen, Hongying, Hongying Chen, Huang, Jipan, Wang, Xin'An   +7 more
core   +1 more source

Tunnel Field-Effect Transistors: State-of-the-Art

IEEE Journal of the Electron Devices Society, 2014
Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs.
Hao Lu, Alan Seabaugh
openaire   +2 more sources

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study. [PDF]

Appl Phys A Mater Sci Process, 2023
Ghosh R, Karmakar A, Saha P.
europepmc   +1 more source

Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal–2DEG Tunnel Junction Field Effect Transistor

, 2011
The Schottky-source forward current-voltage characteristics were measured and analyzed in a recently reported AlGaN/GaN metal-2-D-electron-gas tunnel junction field-effect transistor (FET) (TJ-FET) in order to characterize the effective Schottky barrier ...
Yuan, Li, Zhou, Qi, Zhou, Chunhua, Kevin J. Chen, Chen, Kevin J., Chunhua Zhou, Chen, Hongwei, Hongwei Chen, Li Yuan, Qi Zhou   +9 more
core   +1 more source

Steep-slope tunnel field-effect transistor based on the two-dimensional WSe2 and ReS2

, 2021
Two-dimensional (2D) materials have drawn an immense attention in the research field and are well-known for their outstanding physical, mechanical and optical properties.
Koh, Hui Hui
core  

Special Topic on Tunnel Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
The tunneling field-effect transistor (T-FET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage ( $V_{\mathrm {DD}}$ ). Reducing supply voltage while keeping a low leakage current and a reasonably high ON-current is critical for minimizing energy consumption and ...
openaire   +2 more sources