Results 81 to 90 of about 1,639 (228)

MXenes Contacts for p‐type 2D Electronics

Advanced Science, EarlyView.
Solution‐processed MXene contacts are engineered for p‐type 2H‐MoTe2 transistors. By comparing Ti3C2Tx, Nb2CTx, and Mo2CTx, Nb2CTx is identified as the best‐performing contact among the MXenes examined in this work, offering favorable work‐function alignment, low contact resistance, and near‐ohmic hole injection for scalable 2D electronics.
Tianchao Guo, Maolin Chen, Yizhou Wang, Chen Liu, Xiangming Xu, Linqu Luo, Dekang Zhu, Ning Chu, Xiaowen Zhang, Alfonso Caraveo, Thomas D. Anthopoulos, Xixiang Zhang, Husam N. Alshareef   +12 more
wiley   +1 more source

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing

Advanced Science, EarlyView.
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh, Ji Eun Kim, Suk Yeop Chun, Su In Hwang, Byung Seok Kim, Young Jae Lee, Ho Won Jang, Jung Ho Yoon   +7 more
wiley   +1 more source

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study. [PDF]

Appl Phys A Mater Sci Process, 2023
Ghosh R, Karmakar A, Saha P.
europepmc   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

Advanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami, Koshi Oi, Keisuke Yamada, Jiang Pu, Hao Ou, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu   +7 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

The Tunnel Field-Effect Transistor

, 2016
sponsorship: IWT ...
Verreck, Devin, Groeseneken, Guido, Verhulst, Anne   +2 more
openaire   +1 more source