Results 91 to 100 of about 2,562 (186)

Ge Condensation Process for High ON/OFF Ratio of SiGe Gate-All-Around Nanowire Tunnel Field-Effect Transistor

, 2019
In this study, we suggest an improvement method for high ON/OFF ratio and steep subthreshold swing (SS) which are suitable for gate-all-around (GAA) SiGe tunnel field-effect Transistor (TFET).
Yunho Choi, Choi, Yunho, Park, Byung-Gook, Byung-Gook Park, Kim, Sangwan, Ryoongbin Lee, Sangwan Kim, Lee, Ryoongbin, Soyoun Kim, Kitae Lee, Lee, Kitae, Kim, Sihyun, Kim, Soyoun, Lee, Junil, Sihyun Kim, Junil Lee   +15 more
core   +1 more source

Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation [PDF]

, 2014
In this thesis we mainly focus on silicon germanium based gate normal tunnel field effect transistor. We carried out TCAD modeling with special attention paid to band structure modification of the silicon germanium heterojunction.
Ma, Siguang
core  

Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor

, 2019
In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD ...
Jaehong Lee, Garam Kim, Sangwan Kim
core   +1 more source

Performance Enhancement of the Tunnel Field Effect Transistor using SiGe Source

, 2008
Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications.
Patel, Nayan B, Ramesha, A, Mahapatra, Santanu   +2 more
core  

Experimental demonstration of an on-chip p-bit core based on stochastic magnetic tunnel junctions and 2D MoS2 transistors

Nature Communications
Probabilistic computing is a computing scheme that offers a more efficient approach than conventional complementary metal-oxide–semiconductor (CMOS)-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible ...
John Daniel, Zheng Sun, Xuejian Zhang, Yuanqiu Tan, Neil Dilley, Zhihong Chen, Joerg Appenzeller   +6 more
doaj   +1 more source

Bi-layer pseudo-spin field-effect transistor

, 2012
A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by
Palle, Dharmendar Reddy, Banerjee, Sanjay K., Tutuc, Emanuel, MacDonald, Allan, Register, Leonard Franklin, II   +4 more
core   +1 more source

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor. [PDF]

Micromachines (Basel), 2020
Kim JH, Kim HW, Song YS, Kim S, Kim G.
europepmc   +1 more source

Vertical Organic Tunnel Field-Effect Transistors

, 2019
Doping organic semiconductors has become a key technology to increase the performance of organic light-emitting diodes, solar cells, or field-effect transistors (OFETs).
Changmin Keum (7135154), Shiyi Liu, Max L. Tietze, Björn Lüssem, Akram Al-Shadeedi, Vikash Kaphle, Björn Lüssem (1971265), Akram Al-Shadeedi (7135148), Changmin Keum, Shiyi Liu (1702921), Max L. Tietze (3849700), Vikash Kaphle (7135151)   +11 more
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Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor

In this study, a comparison of the negative capacitance vertical tunnel field-effect transistor (NC-VTFET) and VTFET for biosensing applications was conducted. Dielectrically modulated TFET demonstrates better sensitivity than the traditional metal oxide
Shailendra Singh (2307088), Suneet Kumar Agnihotri (17802842), Navjeet Bagga (17802845), Dip Prakash Samajdar (17802848)   +3 more
core   +1 more source

DESIGN OF SI/SIGE HETEROJUNCTION LINE TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH HIGH-K DIELECTRIC

, 2020
In this paper we propose a Si/SiGe heterojunction line tunnel field effect transistor (TFET) with high-K dielectric. The main objective of this device is to increase the ON current. In the case of Si TFETs the ON current is very low.
Flavia Princess, Nesamani I, V Lakshmi Prabha, Amrutha T P   +3 more
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