Results 171 to 180 of about 1,247 (194)
Some of the next articles are maybe not open access.
Journal of nanoscience and nanotechnology
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer technique, TFET can operate as a NVM device.
Ryoongbin, Lee +5 more
openaire +1 more source
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer technique, TFET can operate as a NVM device.
Ryoongbin, Lee +5 more
openaire +1 more source
Nanooncology: The future of cancer diagnosis and therapy
Ca-A Cancer Journal for Clinicians, 2013Sanjiv S Gambhir
exaly
Heterojunction Tunnel Field-Effect Transistors (TFETs) and Applications
Asif Rasool +3 moreopenaire +1 more source
Oral complications of cancer and cancer therapy
Ca-A Cancer Journal for Clinicians, 2012Joel B Epstein +2 more
exaly
New developments in the diagnosis and treatment of thyroid cancer
Ca-A Cancer Journal for Clinicians, 2013David F Schneider
exaly
Exploring Tunnel Field Effect Transistors (TFETs) as Label-Free Biosensors
Basudha Dewan, Kamal Kishor Choureopenaire +1 more source

