Results 121 to 130 of about 104,391 (313)

Harnessing Time‐Dependent Magnetic Texture Dynamics via Spin‐Orbit Torque for Physics‐Enhanced Neuromorphic Computing

Advanced Science, EarlyView.
A neuromorphic computing platform using spin‐orbit torque‐controlled magnetic textures is reported. The device implements bio‐inspired synaptic functions and achieves high performance in both pattern recognition (>93%) and combinatorial optimization (>95%), enabling unified processing of cognitive and optimization tasks.
Yifan Zhang, Yu Li, Huai Lin, Xinying Wang, Long Liu, Guoliang Xing, Di Wang, Zhihao Zhao, Zhipeng Guo, Junbo Yang, Jiebin Niu, Yan Sun, Tom Wu, Guozhong Xing   +13 more
wiley   +1 more source

An Advanced High‐Performance Ultrafast Ammonium‐Ion Aqueous Battery Based on Dual‐Metal Redox Open Framework Molecular Magnet

Advanced Science, EarlyView.
The Prussian Blue Analogue molecular magnet KMnFeHCF is demonstrated as a high‐performance cathode for ultra‐fast aqueous ammonium‐ion batteries. A full cell using KMnFeHCF and graphite delivers ~71 mAh g−1 at 1.25 A g−1 and ~51 mAh g−1 at 2.2 A g−1, retaining 50% capacity after 1850 cycles. Its scalability, cycling stability, and low cost offer strong
Nilasha Maiti, Pramod Bhatt, Manoj K Sharma, Sher Singh Meena, Mayuresh D Mukadam, Soumen Samanta   +5 more
wiley   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Heterosynaptic Memtransistors Based on Switching Operation Mechanism Using Designed Organic/Inorganic Heterostructures for Neuromorphic Electronics

Advanced Science, EarlyView.
Heteroysynaptic memtransistors are fabricated using a combination of π‐conjugated organic semiconductor TCTA and TMDC MoS2 heterostructure with bottom‐contact architecture. Non‐volatile heterosynaptic and homosynaptic functions such as long‐term plasticity and spike‐timing‐dependent plasticity are emulated by drain and gate pulses based on conduction ...
Taek Joon Kim, Hye Lim Jeong, Sang Wook Song, Dayeong Kwon, Sang‐hun Lee, Jinsoo Joo   +5 more
wiley   +1 more source

Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation

Advanced Science, EarlyView.
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen, Fuwei Yang, Tielin Wu, Yelingyi Wang, Quanshui Zheng, Deli Peng, Zhanghui Wu   +6 more
wiley   +1 more source

An Optically Transparent Water‐Based Metamaterial Absorber for Ultra‐Broadband EMI Shielding in Coal Mines

Advanced Science, EarlyView.
This study introduces a novel metamaterial absorber integrating water as a lossy medium with patterned indium tin oxide (ITO) films to achieve simultaneous optical transparency and ultra‐wideband electromagnetic absorption over 0.52‐40 GHz. It effectively overcomes the limitations of conventional opaque and bulky shielding materials, offering a ...
Xiaojun Huang, Lina Gao, Yidan Xu, Yifei Wang, Wei Hou, Yu Luo   +5 more
wiley   +1 more source

Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations

Materials for Quantum Technology
The end of Dennard scaling, which facilitated proportional increases in computing power without added energy costs until the mid-2000s, has underscored the urgent need for innovative semiconductor devices that can enhance energy efficiency.
C R Allemang, E M Anderson, X Gao, C Arose, J P Mendez, T A Weingartner, D M Campbell, A J Muhowski, T-M Lu, S Misra   +9 more
doaj   +1 more source

Performance Investigation of Source Extension Approach on III–V Vertical Tunnel FET

IEEE Access
A triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET) structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a source pocket, and Device-B, which uses a new source extension approach ...
M. Saravanan, Eswaran Parthasarathy
doaj   +1 more source

Decoding Trap States in Working 2D Perovskite Multi‐Functional Devices

Advanced Science, EarlyView.
Illustration of the photoluminescence spectrum and energy‐level landscape governing trap‐mediated carrier dynamics in 2D F‐PEAI photodetectors. A novel approach capturing dynamic trap occupation and retrapping in devices under operating conditions, directly links defect energetics to carrier transport and enhanced photoresponse in multifunctional ...
Ioannis Leontis, Karl Jonas Riisnaes, Hoi Tung Lam, Rosanna Mastria, Luisa De Marco, Annalisa Coriolano, Steven Hepplestone, Monica Felicia Craciun, Saverio Russo   +8 more
wiley   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

Advanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo, Jiseong Im, Joon Hwang, Sung‐Ho Park, Jonghyun Ko, Kangwook Choi, Sangwoo Ryu, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source