Results 131 to 140 of about 5,733 (288)

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

open access: yesAdvanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad   +4 more
wiley   +1 more source

A Neuromorphic Simulation Framework for Indium‐Gallium‐Zinc‐Oxide Charge‐Trap Synaptic Transistors: From Device Modeling to System Simulation

open access: yesAdvanced Intelligent Systems, EarlyView.
This work presents a comprehensive framework bridging device fabrication, modeling, and system‐level simulation for an indium‐gallium‐zinc‐oxide (IGZO) charge‐trap synaptic transistor‐based neuromorphic system. By developing a precise SPICE model derived from fabricated IGZO synaptic transistors, the study incorporates parasitic RC loads into array ...
Yumin Yun   +5 more
wiley   +1 more source

Fast electro-optical switching of single-barrier tunneling LED's

open access: yes, 2001
: We have studied the optical response of two single-barrier AlAs/GaAs tunneling-based light-emitting diodes (TLED's) excited by Very fast electrical pulses (transition times of less than 100 ps).
Romandic, I.   +5 more
core  

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

Resonant tunneling and bistability in a double barrier structure under an intense terahertz laser

open access: yes, 2001
By using exact wave functions of an electron in a terahertz laser field, we calculated the electron resonant tunneling through a double barrier structure. It is found that the laser field has two effects on the current voltage characteristics.
Chao Zhang (19587205)
core  

Linking Synthetic Materials Chemistry to Electrocatalytic Performance

open access: yesAngewandte Chemie International Edition, EarlyView.
Synthetic materials chemistry governs electrocatalyst performance through precise control of phase, composition, defects, and morphology, while emerging operando techniques, data‐driven approaches, and automated laboratories are advancing the field toward predictive catalyst design for sustainable energy conversion.
Debabrata Bagchi   +3 more
wiley   +1 more source

Quantum Phenomena in Molecular and Biological Systems: A Decoherence‐Based Decision Framework With Falsifiable Predictions and a Failure‐Mode Taxonomy

open access: yesAdvanced Physics Research, EarlyView.
A physics‐grounded framework based on decoherence timescales (τ_dec vs τ_func), Markovian validity, and falsifiability criteria is applied across molecular systems to distinguish where quantum effects are necessary, marginal, or irrelevant. The analysis integrates quantum chemistry, biological quantum mechanisms, and quantum computing under a unified ...
Sarfaraz K. Niazi
wiley   +1 more source

An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers

open access: yesAdvanced Physics Research, EarlyView.
A universal epitaxial strategy overcomes the long‐standing limitation of insulating buffers in GaN‐on‐Silicon technology. By exploiting a unique amorphous‐like interlayer (AL‐IL) formed via ultrathin metal pre‐deposition, high‐quality GaN films with excellent vertical conductivity are realized on silicon wafers.
Fumio Kawamura   +2 more
wiley   +1 more source

Resonant Tunneling in Laser‐Dressed Double‐Barrier Nanostructures: Role of Potential Geometry

open access: yesAdvanced Physics Research, EarlyView.
A schematic illustration of laser‐dressed double‐barrier nanostructures with rectangular, parabolic, and triangular potential profiles is presented. The intense laser field modifies the effective confinement potential, leading to a shift in resonance energies.
Recep Aydın, Mehmet Batı
wiley   +1 more source

Quantum properties of proton subsystem in proton semiconductors

open access: yesҚарағанды университетінің хабаршысы. Физика сериясы, 2018
The quantum mechanism of the relaxation motion of the most mobile charge carriers (protons) in crystals with hydrogen bonds (HBC) in the range of low temperature (70-100 K) is studied. The energy spectrum of the proton in the unperturbed potential field
V.A. Kalytka   +4 more
doaj  

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