Results 121 to 130 of about 5,733 (288)

Antiaromaticity‐Driven Enhancement of Single‐Molecule Electrical Conductance by s‐Indacene Molecular Bridges

Angewandte Chemie, EarlyView.
Within the same molecular length scale, antiaromatic s‐indacene exhibits a marked increase in conductance compared to its aromatic benzodithiophene counterpart. Notably, the inherently small HOMO–LUMO gap of antiaromatic systems maintains a certain level of conductance even in the presence of cross‐conjugation.
Ching‐Piao Chu, Yuki Hanamura, Tatsuhiko Ohto, Seiya Maeda, Ryo Yamada, Siao‐Lei Yu, Yen‐Ju Cheng, Hirokazu Tada, Yoshito Tobe   +8 more
wiley   +2 more sources

Secondary Alpha Isotope Effects on Deuterium Tunneling in Triplet o-Methylanthrones:  Extraordinary Sensitivity to Barrier Width

, 2016
The rates of deuterium transfer in the photoenolization of triplet 1,4-dimethyl-10H-anthracen-9-one (1) with varying degrees of deuterium label in their methyl groups (1-d3, 1-d2, and 1-d) have been investigated as a function of temperature between 5 and
Manoj V. Warrier (2639797), Krisztina Peterfy (2675908), Luis M. Campos (1344636), K. N. Houk (1247004), Miguel A. Garcia-Garibay (1282440)   +4 more
core   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors

Advanced Electronic Materials, EarlyView.
Morphotropic phase boundary engineering in HfxZr1‐xO2 heterostructures enables low‐voltage and fast ferroelectric switching. This layer promotes polarization switching near 0 V, resulting in ≈25% reduction in coercive voltage and enhanced capacitance. This heterostructure design provides a practical route for energy‐efficient ferroelectric capacitors ...
Changhyeon Han, Been Kwak, Ki‐Ryun Kwon, Jeong‐Han Kim, Jiyong Yim, Hyun‐Min Kim, Sangeun Kwak, Daewoong Kwon   +7 more
wiley   +1 more source

Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations

Materials for Quantum Technology
The end of Dennard scaling, which facilitated proportional increases in computing power without added energy costs until the mid-2000s, has underscored the urgent need for innovative semiconductor devices that can enhance energy efficiency.
C R Allemang, E M Anderson, X Gao, C Arose, J P Mendez, T A Weingartner, D M Campbell, A J Muhowski, T-M Lu, S Misra   +9 more
doaj   +1 more source

Performance Investigation of Source Extension Approach on III–V Vertical Tunnel FET

IEEE Access
A triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET) structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a source pocket, and Device-B, which uses a new source extension approach ...
M. Saravanan, Eswaran Parthasarathy
doaj   +1 more source

Advancing Energy Materials by In Situ Atomic Scale Methods

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss, Michael Seibt, Martin Wenderoth, Oliver Bünermann, Ole Bunjes, Till Domröse, Christian Eckel, Francesca Falorsi, Christoph Flathmann, Monica Kolek Martinez de Azagra, Matthias Krüger, Jonas Lindner, Tobias Meyer, Claus Ropers, Ulrich Ross, Kai Rossnagel, Sreeju Sreekantan Nair Lalithambika, Simone Techert, Georg A. Traeger, Cynthia Volkert, R. Thomas Weitz, Alec M. Wodtke   +21 more
wiley   +1 more source

Tunneling processes induced by terahertz fields

, 2002
Tunneling processes induced by terahertz frequency electric fields have been investigated. A drastic enhancement of the tunneling probability has been observed by increasing the frequency omega at omegatau(e) >> 1 where tau(e) is the tunneling time.
Prettl, Wilhelm, Yassievich, I., Yassievich, Irina, Ganichev, Sergey   +3 more
core   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes

Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
identifier:oai:t2r2.star.titech.ac.jp ...
openaire   +1 more source