Results 151 to 160 of about 104,391 (313)

Ge/In_0.53Ga_0.47As heterojunction based doping less TFET for high sensitivity label free biosensing applications. [PDF]

Sci Rep
Jaya M, Lorenzo R.
europepmc   +1 more source

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

Advanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang   +6 more
wiley   +1 more source

Designing functional filler networks via in situ silver nanoparticles through barrier tuning and volume exclusion. [PDF]

Nat Commun
Tian K, Jing J, Wen M, Zhang L, Li Q, Cheng M, Wen J, Wen Y, Wen Y, Fu Q, Deng H.   +10 more
europepmc   +1 more source

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier.

Physical Review Letters, 2016
Xiaohui Liu, J. Burton, E. Tsymbal
semanticscholar   +1 more source

Enhancement of the Photoelectric Performance of (6,5) Carbon Nanotubes via Construction of Type‐I Heterojunctions with Rhodamine B

Advanced Electronic Materials, EarlyView.
Single‐chirality (6,5) carbon nanotube (CNT) films, when integrated with RhB molecules to form Type I heterogeneous films, exhibit a more than twofold increase in photoluminescence efficiency and approximately one‐order‐of‐magnitude enhancement in photoelectric conversion efficiency compared to pristine (6,5) CNT films.
Shilong Li, Linhai Li, Dehua Yang, Xiaojun Wei, Weiya Zhou, Huaping Liu   +5 more
wiley   +1 more source

Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures. [PDF]

Nat Commun
Chang K, Ji JR, Gao Z, Huamán A, Cao RQ, Wang WL, Yue C, Liu C, Barraza-Lopez S, Parkin SSP.   +9 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Catalytic Hydrogenation Dominated by Concerted Hydrogen Tunneling at Room Temperature. [PDF]

ACS Cent Sci
Wu Q, Liu P, Zhang XG, Fan C, Chen Z, Qin R, Gao YQ, Zhao Y, Zheng N.   +8 more
europepmc   +1 more source

Advancing Energy Materials by In Situ Atomic Scale Methods

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss, Michael Seibt, Martin Wenderoth, Oliver Bünermann, Ole Bunjes, Till Domröse, Christian Eckel, Francesca Falorsi, Christoph Flathmann, Monica Kolek Martinez de Azagra, Matthias Krüger, Jonas Lindner, Tobias Meyer, Claus Ropers, Ulrich Ross, Kai Rossnagel, Sreeju Sreekantan Nair Lalithambika, Simone Techert, Georg A. Traeger, Cynthia Volkert, R. Thomas Weitz, Alec M. Wodtke   +21 more
wiley   +1 more source

Interfacial magnetic coupling in CrI₃/CrBr₃ heterostructures via tunneling magnetoresistance. [PDF]

iScience
Wu B, Wang Y, Ren Y, Zhou C, Ding S, Chen X, Long G.   +6 more
europepmc   +1 more source