Results 241 to 250 of about 104,391 (313)

Light-Matter Interaction in Ultrastable Tunneling Nanogaps. [PDF]

ACS Nano
Tang Y, Prakash S, Nandi P, Ariando A, Agrawal A, Harutyunyan H.   +5 more
europepmc   +1 more source

Oxide induced degradation in MoS2 Field-Effect Transistors

Ducry F, Troeye B, Dossena M, Luisier M, Pourtois G, Afzalian A.   +5 more
europepmc   +1 more source

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Effect of Well Width and Barrier Width on I–V Characteristics of Armchair Graphene Nanoribbon based Resonant Tunneling Diode Structure

2021 Devices for Integrated Circuit (DevIC), 2021
We study the effect of well width (W w ) and barrier width (W b ) on I-V characteristics of symmetric armchair graphene nanoribbon (AGNR) based resonant tunneling diode (RTD) structure. We show that the decrease of either W w or W b increases the peak current I P . As W w increases, I P occurs at less bias voltage V, however, with the change in W b
Madhusudan Mishra, Nikhil R. Das, Narayan Sahoo, Trinath Sahu   +3 more
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Estimation of tunneling-barrier width in scanning tunneling microscope from noise characteristics

Measurement Techniques, 1999
A method is proposed for estimation of the potential-barrier width of the tunneling junction of a scanning tunneling microscope (STM). The method is based on measurement of the fluctuations of the tunneling-barrier height and their correlation with the flicker noise of the tunneling current.
S. A. Bychikhin, V. V. Potemkin, A. V. Stepanov   +2 more
openaire   +2 more sources

Computer control of the tunnel barrier width for the scanning tunneling microscope

Review of Scientific Instruments, 1989
The design of a computer system which directly controls tunnel barrier width in a scanning tunneling microscope (STM) is described. This capability allows STM scans to be performed at a speed which is automatically determined by the roughness of the surface under study.
R. Piner, R. Reifenberger
openaire   +2 more sources

Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p–n diode

Microelectronics Journal, 2015
InAs-based p-n interband tunneling bi-barrier resonant microwave (ITE BBRM) devices were successfully fabricated by using the molecular beam epitaxial (MBE) method in this research. The influence of a central barrier thickness from 10A to 40A on electrical characteristics of BBRM devices was investigated by using theoretical analysis and experimental ...
Chih Chin Yang, Yan Kuin Su, Hao Hsiung Lin   +2 more
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Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

Japanese Journal of Applied Physics, 2011
Electrical properties of the Silicon quantum dots (Si-QD) light-emitting diodes (LEDs), in its dependence on the nitrogen source used in the silicon nitride (SiN x ) matrix growth, have been studied. Si-QDs are formed in-situ during the SiN x film growth, and no post ...
Tae-Youb Kim, Nae-Man Park, Cheol-Jong Choi, Chul Huh, Chang-Geun Ahn, Gun Yong Sung, In-Kyu You, Maki Suemitsu   +7 more
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Local density of states in double-barrier resonant-tunneling structures. II. Finite-width barriers

Physical Review B, 1989
The local density of states (DOS) in the quantum-well region of a double-barrier resonant-tunneling structure is calculated for the case of zero applied bias. As the barrier potential ${V}_{0}$ goes to zero, the local DOS approaches an ${E}^{1/2}$ behavior; as ${V}_{0}$ goes to infinity, a staircaselike local DOS is obtained.
, Bruno, , Bahder
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Secondary Alpha Isotope Effects on Deuterium Tunneling in Triplet o-Methylanthrones:  Extraordinary Sensitivity to Barrier Width

Journal of the American Chemical Society, 2005
The rates of deuterium transfer in the photoenolization of triplet 1,4-dimethyl-10H-anthracen-9-one (1) with varying degrees of deuterium label in their methyl groups (1-d3, 1-d2, and 1-d) have been investigated as a function of temperature between 5 and 77 K. Measurable rate constants in the case of 1-d3 and 1-d2 were used to construct Arrhenius plots
Luis M, Campos, Manoj V, Warrier, Krisztina, Peterfy, K N, Houk, Miguel A, Garcia-Garibay   +4 more
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Interplay between Barrier Width and Height in Electron Tunneling:  Photoinduced Electron Transfer in Porphyrin-Based Donor−Bridge−Acceptor Systems

The Journal of Physical Chemistry A, 2005
The rate of electron tunneling in molecular donor-bridge-acceptor (D-B-A) systems is determined both by the tunneling barrier width and height, that is, both by the distance between the donor and acceptor as well as by the energy gap between the donor and bridge moieties.
Karin, Pettersson, Joanna, Wiberg, Thomas, Ljungdahl, Jerker, Mårtensson, Bo, Albinsson   +4 more
openaire   +3 more sources