Results 261 to 270 of about 5,733 (288)
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Japanese Journal of Applied Physics, 1986
The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×102 Acm-2 to 1.2×104 ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×102 Acm-2 to 1.2×104 ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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Applied Physics Letters, 1986
The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers of 8 atomic layers. It is shown for the first time that the density JRT of resonant current varies from 8×102 to 1.6×104 A cm−2 by the choice of the well width from 9 to 5 nm in accordance with theoretical ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers of 8 atomic layers. It is shown for the first time that the density JRT of resonant current varies from 8×102 to 1.6×104 A cm−2 by the choice of the well width from 9 to 5 nm in accordance with theoretical ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation
Superlattices and Microstructures, 2016Abstract A barrier width modulated GaN based resonant tunnel diode is theoretically proposed which exhibits a giant peak to valley current ratio as high as 60 and a high negative differential conductance (NDC) of 1.77 × 106 S/cm2 with very low valley current density of 3 mA/cm2.
Sandeep Sankaranarayanan, Dipankar Saha
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Journal of the American Chemical Society, 2005
The rates of deuterium transfer in the photoenolization of triplet 1,4-dimethyl-10H-anthracen-9-one (1) with varying degrees of deuterium label in their methyl groups (1-d3, 1-d2, and 1-d) have been investigated as a function of temperature between 5 and 77 K. Measurable rate constants in the case of 1-d3 and 1-d2 were used to construct Arrhenius plots
Luis M, Campos +4 more
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The rates of deuterium transfer in the photoenolization of triplet 1,4-dimethyl-10H-anthracen-9-one (1) with varying degrees of deuterium label in their methyl groups (1-d3, 1-d2, and 1-d) have been investigated as a function of temperature between 5 and 77 K. Measurable rate constants in the case of 1-d3 and 1-d2 were used to construct Arrhenius plots
Luis M, Campos +4 more
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Thin Solid Films, 1994
Abstract Langmuir-Blodgett multilayer structures were fabricated from two homologous, amphiphilic phthalocyanine molecules and differed only in interlayer separation. Sandwiching such multilayers between electrodes and using a pulsed photoconduction technique it proved possible to excite mobile carriers and to observe their motion directly as an ...
K.J. Donovan +7 more
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Abstract Langmuir-Blodgett multilayer structures were fabricated from two homologous, amphiphilic phthalocyanine molecules and differed only in interlayer separation. Sandwiching such multilayers between electrodes and using a pulsed photoconduction technique it proved possible to excite mobile carriers and to observe their motion directly as an ...
K.J. Donovan +7 more
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Dual Modulation of Barrier Width and Height in van der Waals Ferroelectric Tunnel Junctions
The Journal of Physical Chemistry LettersTwo-dimensional ferroelectric tunnel junctions (2D FTJs) have attracted extensive attention in recent years, which mainly change the height of the tunnel barrier via manipulation of the ferroelectric polarization. However, it is very challenging to realize the high tunneling electroresistance (TER) of FTJs based on the barrier height.
Yingying Zheng +3 more
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Semiconductors, 2009
A theory of resonance energies and widths of quasi-stationary states is suggested; this theory is based on the distribution function of the probability density for the location of an electron in a two-barrier resonance-tunneling structure, and on the use of a transfer matrix and an S scattering matrix in the models of rectangular and δ-shaped ...
N. V. Tkach, Yu. A. Seti
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A theory of resonance energies and widths of quasi-stationary states is suggested; this theory is based on the distribution function of the probability density for the location of an electron in a two-barrier resonance-tunneling structure, and on the use of a transfer matrix and an S scattering matrix in the models of rectangular and δ-shaped ...
N. V. Tkach, Yu. A. Seti
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The Journal of Physical Chemistry A, 2005
The rate of electron tunneling in molecular donor-bridge-acceptor (D-B-A) systems is determined both by the tunneling barrier width and height, that is, both by the distance between the donor and acceptor as well as by the energy gap between the donor and bridge moieties.
Karin, Pettersson +4 more
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The rate of electron tunneling in molecular donor-bridge-acceptor (D-B-A) systems is determined both by the tunneling barrier width and height, that is, both by the distance between the donor and acceptor as well as by the energy gap between the donor and bridge moieties.
Karin, Pettersson +4 more
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Technical Physics Letters, 1997
This paper discusses the question of how the size of the spacer layers affects the position and width of the bistability region in the current-voltage characteristics of tunnel resonance diodes. The current-voltage characteristics were calculated in terms of the self-consistent effective-mass approximation.
M. M. Vrubel’ +2 more
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This paper discusses the question of how the size of the spacer layers affects the position and width of the bistability region in the current-voltage characteristics of tunnel resonance diodes. The current-voltage characteristics were calculated in terms of the self-consistent effective-mass approximation.
M. M. Vrubel’ +2 more
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Physica C: Superconductivity, 1991
Abstract Atomic resolution STM/STS has been performed on the cleaved surface (BiO layer) of Bi 2 Sr 2 CaCu 2 O y at cryogenic temperatures down to 4.2K. The STM image taken at 4.2K clearly demonstrated atomic corrugations of Bi atoms, securing the vacuum tunneling in the present experiment.
Masashi Nantoh +4 more
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Abstract Atomic resolution STM/STS has been performed on the cleaved surface (BiO layer) of Bi 2 Sr 2 CaCu 2 O y at cryogenic temperatures down to 4.2K. The STM image taken at 4.2K clearly demonstrated atomic corrugations of Bi atoms, securing the vacuum tunneling in the present experiment.
Masashi Nantoh +4 more
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