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Decay widths for double-barrier resonant tunneling
Journal of Applied Physics, 1991Calculations of the decay width and the partial decay widths for double-barrier resonant tunneling structures are discussed using a description of resonances in terms of the complex energy poles of the transmission amplitude of the system and comparing it with the corresponding Wentzel–Kramers–Brillouin approximations.
Gastón García-Calderón +2 more
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Local density of states in double-barrier resonant-tunneling structures. II. Finite-width barriers
Physical Review B, 1989The local density of states (DOS) in the quantum-well region of a double-barrier resonant-tunneling structure is calculated for the case of zero applied bias. As the barrier potential ${V}_{0}$ goes to zero, the local DOS approaches an ${E}^{1/2}$ behavior; as ${V}_{0}$ goes to infinity, a staircaselike local DOS is obtained.
, Bruno, , Bahder
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2021 Devices for Integrated Circuit (DevIC), 2021
We study the effect of well width (W w ) and barrier width (W b ) on I-V characteristics of symmetric armchair graphene nanoribbon (AGNR) based resonant tunneling diode (RTD) structure. We show that the decrease of either W w or W b increases the peak current I P . As W w increases, I P occurs at less bias voltage V, however, with the change in W b
Madhusudan Mishra +3 more
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We study the effect of well width (W w ) and barrier width (W b ) on I-V characteristics of symmetric armchair graphene nanoribbon (AGNR) based resonant tunneling diode (RTD) structure. We show that the decrease of either W w or W b increases the peak current I P . As W w increases, I P occurs at less bias voltage V, however, with the change in W b
Madhusudan Mishra +3 more
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Effect of Barrier Width on Bias-Dependent Tunnelling in Ferromagnetic Junctions
Chinese Physics Letters, 2004We present a finite temperature theory for bias-dependent tunnelling in ferromagnetic tunnelling junctions. The effects of the barrier width d on the tunnelling magnetoresistance (TMR) and its sign change behaviour are discussed with this theory. Numerical results show that both the zero-bias TMR and the critical voltage Vc at which the TMR changes its
Li Fei-Fei +4 more
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PNPN tunnel FET with controllable drain side tunnel barrier width: Proposal and analysis
Superlattices and Microstructures, 2015Abstract A detailed study of a technique to realize a PNPN tunnel field effect transistor (TFET) with a controllable tunnel barrier width on the drain side is reported in this paper. By using the charge plasma concept on a doped N + /P − starting structure, we have demonstrated the possibility of realizing the PNPN TFET without the need for any ...
Dawit Burusie Abdi, M. Jagadesh Kumar
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Journal of Applied Physics, 1990
The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width.
J. F. Chen +4 more
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The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width.
J. F. Chen +4 more
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Level width of a quasibound state in a double-barrier parabolic-well resonant tunneling structure
Zeitschrift für Physik B Condensed Matter, 1997Taking exact Airy functions and Hermitian functions as envelope functions, we investigate in detail the level width of a quasibound state for electrons coherent resonant tunneling through symmetric and asymmetric double-barrier parabolic-well resonant tunneling structures (DBRT) with the transfer-matrix formalism.
Yong Guo, Binglin Gu, Wenhui Duan
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THE WIDTH RATIO OF TWO BARRIERS IN RESONANT TUNNELING
Modern Physics Letters B, 2003Numerical calculations by a transfer matrix method have been performed to obtain the transmission coefficient of rectangular double barrier structures. The dependence of the well width, barrier width and the barrier height was systematically investigated.
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Journal of Physics: Condensed Matter, 1995
When electrons tunnel through a double-barrier structure, there exists a region of bistability (or tristability) in the current-voltage characteristics due to the dynamical charge feedback effect in the resonant well. We propose a mechanism of acoustic-phonon-assisted tunnelling to explain the experimentally observed non-monotonic behaviour of the ...
D J Fisher, Chao Zhang
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When electrons tunnel through a double-barrier structure, there exists a region of bistability (or tristability) in the current-voltage characteristics due to the dynamical charge feedback effect in the resonant well. We propose a mechanism of acoustic-phonon-assisted tunnelling to explain the experimentally observed non-monotonic behaviour of the ...
D J Fisher, Chao Zhang
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Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, 1996
Dependence of the peak current densities (I p) on AlSb barrier and GaSb well widths (L b and L w) in InAs/AlSb/ GaSb/AlSb/InAs double-barrier resonant interband tunneling diodes was systematically investigated. We found that I p increases exponentially and reaches 7.5×
Hiroto Kitabayashi Hiroto Kitabayashi +2 more
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Dependence of the peak current densities (I p) on AlSb barrier and GaSb well widths (L b and L w) in InAs/AlSb/ GaSb/AlSb/InAs double-barrier resonant interband tunneling diodes was systematically investigated. We found that I p increases exponentially and reaches 7.5×
Hiroto Kitabayashi Hiroto Kitabayashi +2 more
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