Results 241 to 250 of about 5,733 (288)

Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors. [PDF]

ACS Photonics
David M, Dabrowska A, Sistani M, Song Z, Maraspini F, Wu Y, Wenk M, Fuchsberger A, Vogl L, Schweizer P, Szedlak R, Schwarz B, Weber WM, Strasser G, García de Abajo FJ, Darmo J, Lendl B, Lugstein A.   +17 more
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Computer control of the tunnel barrier width for the scanning tunneling microscope

Review of Scientific Instruments, 1989
The design of a computer system which directly controls tunnel barrier width in a scanning tunneling microscope (STM) is described. This capability allows STM scans to be performed at a speed which is automatically determined by the roughness of the surface under study.
R Reifenberger, Reifenberger R
exaly   +2 more sources

Estimation of tunneling-barrier width in scanning tunneling microscope from noise characteristics

Measurement Techniques, 1999
A method is proposed for estimation of the potential-barrier width of the tunneling junction of a scanning tunneling microscope (STM). The method is based on measurement of the fluctuations of the tunneling-barrier height and their correlation with the flicker noise of the tunneling current.
S. A. Bychikhin, V. V. Potemkin, A. V. Stepanov   +2 more
exaly   +2 more sources

Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

Solid-State Electronics, 2002
Abstract The novel Al 0.66 In 0.34 As 0.85 Sb 0.15 /In 0.53 Ga 0.47 As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs).
Yan-Kuin Su, Wen-Bin Chen
exaly   +2 more sources

Peak Width Analysis of Current–Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes

Japanese Journal of Applied Physics, 2000
We studied the peak width of current vs voltage (I–V) characteristics of triple-barrier resonant tunneling diodes (TBRTDs) experimentally and theoretically. A GaInAs/InP TBRTD was fabricated by organo metallic vapor phase epitaxy (OMVPE). A theory of I–V characteristics of TBRTDs was developed by taking the structural inhomogeneity ...
Masanori Nagase, Michihiko Suhara, Yasuyuki Miyamoto   +2 more
exaly   +2 more sources

Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p–n diode

Microelectronics Journal, 2015
InAs-based p-n interband tunneling bi-barrier resonant microwave (ITE BBRM) devices were successfully fabricated by using the molecular beam epitaxial (MBE) method in this research. The influence of a central barrier thickness from 10A to 40A on electrical characteristics of BBRM devices was investigated by using theoretical analysis and experimental ...
Chih Chin Yang, Yan Kuin Su
exaly   +2 more sources

Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

Japanese Journal of Applied Physics, 2011
Electrical properties of the Silicon quantum dots (Si-QD) light-emitting diodes (LEDs), in its dependence on the nitrogen source used in the silicon nitride (SiN x ) matrix growth, have been studied. Si-QDs are formed in-situ during the SiN x film growth, and no post ...
Tae-Youb Kim, Nae-Man Park, Cheol-Jong Choi, Chul Huh, Chang-Geun Ahn, Gun Yong Sung, In-Kyu You, Maki Suemitsu   +7 more
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A study of tunneling in triangular resonant tunnel diodes: Effect of barrier width, barrier height, pressure, temperature, and heterostructure strain

Micro and Nanostructures, 2023
L Bruno Chandrasekar, P Muthukumar
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Giant ferroelectric modulation of barrier height and width in multiferroic tunnel junctions

Physical Review B, 2021
The high tunneling electroresistance (TER) effect, generally caused by ferroelectric (FE)-modulated barrier height or width, is essential for the applications of multiferroic tunnel junctions in data storage. It is traditionally obtained by distinct electrical screening lengths of electrodes. Interface engineering can enhance the TER effect further. In
L. N. Jiang, Yun-Peng Wang, W. Z. Chen, X. F. Han   +3 more
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