Results 271 to 280 of about 5,733 (288)

Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction

Journal of Superconductivity and Novel Magnetism, 2007
We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for current-driven magnetization reversal.
Jun Okabayashi, M. Watanabe, H. Toyao, T. Yamaguchi, Junji YOSHINO   +4 more
openaire   +1 more source

Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir–Mn Exchange Biased Single and Double Tunnel Junctions

Japanese Journal of Applied Physics, 2000
Dual spin-valve-type double tunnel junctions (DTJs) of Ir–Mn/CoFe/AlO x /Co90Fe10/AlO x /CoFe/Ir–Mn and spin-valve-type single tunnel junctions (STJs) of Ir–Mn/CoFe/AlO x /CoFe/Ni–Fe were fabricated using an ultrahigh vacuum ...
Yoshiaki Saito, Minoru Amano, Kentaro Nakajima, Shigeki Takahashi, Masayuki Sagoi, Koichiro Inomata   +5 more
openaire   +1 more source

Barrier Widths and Tunneling in the Four‐Centered Syn Elimination of H‐X from Ethyl‐X. The Role of Transition State Asymmetry

Israel Journal of Chemistry, 1993
AbstractThe syn elimination of HX from CH3CH2X produces a C2H4‐HX complex, which is stabilized relative to ethylene and HX. The primary kinetic H/D isotope effects in the complex‐forming steps of such reactions have been examined ab initio for X = H, BH2, CH2, NH2, NH3+, OH, OH2+, F, Cl, and Br, using 3–21G, 3–21G(d), 6–31G(d), and MP2/6–31G(d ...
Saul Wolfe, Chan‐Kyung Kim
openaire   +1 more source

Effect of Barrier Width on Spin-Dependent Tunneling in Asymmetrical Double Barrier Semiconductor Heterostructures

Journal of Nanoengineering and Nanomanufacturing, 2016
L. Bruno Chandrasekar, K. Gnanasekar, M. Karunakaran, R. Chandramohan   +3 more
openaire   +1 more source

Effects of tunneling barrier width on the electrical characteristic in Si-QD LEDs

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
T. Y. Kim, N. M. Park, C. J. Choi, C. Huh, C. G. Ahn, G. Y. Sung, I. K. You, M. Suemitsu   +7 more
openaire   +1 more source

Properties of vacuum tunneling currents: Anomalous barrier heights

IBM Journal of Research and Development, 1986
J B Pethica
exaly  

Tunneling through ultrathin GaAs n/sup ++/-p/sup ++/-n/sup ++/ barrier grown by molecular layer epitaxy

IEEE Transactions on Electron Devices, 1998
Yongxun Liu, P Plotka
exaly  

Triangular double barrier resonant tunneling

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2005
Masato Ohmukai
exaly  

A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
Y. H. Tseng, S. S. Chung, S. Shin, S. S. M. Kang, H. Y. Lee, M. J. Tsai   +5 more
openaire   +1 more source

Computer simulation of a wave packet tunneling through a square barrier

IEEE Transactions on Electron Devices, 1989
T E Feuchtwang, E Kazes
exaly