Results 111 to 120 of about 1,753 (147)

Van der Waals epitaxy of metal dihalide

Applied Surface Science, 1997
Abstract Ultrathin layered metal dihalide films (PbI 2 , CdI 2 ) were grown on highly lattice mismatched (max. 44%) surfaces of several layered materials (LM's) and their growth features were studied by reflection high energy electron diffraction. Those metal dihalides grew epitaxially with their (0001) surfaces parallel to those of the substrates ...
Tetsuji Ueno, Hideki Yamamoto, Koichiro Saiki, Atsushi Koma   +3 more
openaire   +1 more source

Band Lineup of Van Der Waals-Epitaxy Interfaces

MRS Proceedings, 1996
AbstractEpitaxial lattice mismatched heterointerfaces between layered semiconductors and themselves and II-VI semiconductors (CdS, CdTe), respectively, have been prepared and their band lineup determined by photoemission. Different physical mechanisms, which govern the heterointerface formation, can be discriminated due to the specific properties of ...
R. Schlaf, T. Löher, O. Lang, A. Klein, C. Pettenkofer, W. Jaegermann   +5 more
openaire   +1 more source

Single-Crystal Graphene-Directed van der Waals Epitaxial Resistive Switching

ACS Applied Materials & Interfaces, 2018
Graphene has been broadcasted as a promising choice of electrode and substrate for flexible electronics. To be truly useful in this regime, graphene has to prove its capability in ordering the growth of overlayers at an atomic scale, commonly known as epitaxy.
Xin Sun, Zonghuan Lu, Zhizhong Chen, Yiping Wang, Jian Shi, Morris Washington, Toh-Ming Lu   +6 more
openaire   +2 more sources

Solution phase van der Waals epitaxy of ZnO wire arrays

Nanoscale, 2013
As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization.
Yue, Zhu, Yong, Zhou, Muhammad Iqbal Bakti, Utama, María, de la Mata, Yanyuan, Zhao, Qing, Zhang, Bo, Peng, Cesar, Magen, Jordi, Arbiol, Qihua, Xiong   +9 more
openaire   +2 more sources

Hybrid van der Waals Epitaxy

Physical Review Letters
The successful growth of non-van der Waals (vdW) group-III nitride epilayers on vdW substrates not only opens an unprecedented opportunity to obtain high-quality semiconductor thinfilm but also raises a strong debate for its growth mechanism. Here, combining multiscale computational approaches and experimental characterization, we propose that the ...
Lin Hu, Danshuo Liu, Fawei Zheng, Xuelin Yang, Yugui Yao, Bo Shen, Bing Huang   +6 more
openaire   +2 more sources

Mechanically Robust Interface at Metal/Muscovite Quasi van der Waals Epitaxy

ACS Applied Materials & Interfaces, 2023
Quasi van der Waals epitaxy is an approach to constructing the combination of 2D and 3D materials. Here, we quantify and discuss the 2D/3D interface structure and the corresponding features in metal/muscovite systems. High-resolution scanning transmission electron microscopy reveals the atomic arrangement at the interface.
Jia-Wei Chen, Yun-Guan Wei, Hung-Yang Lo, SiCheng Lu, Yi-Che Chen, Chi-Fong Lei, Po-Liang Liu, Pu Yu, Nien-Ti Tsou, Akira Yasuhara, Wen-Wei Wu, Ying-Hao Chu   +11 more
openaire   +2 more sources

van der Waals epitaxy: 2D materials and topological insulators

Applied Materials Today, 2017
Abstract van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and topological insulators (TIs) onto a variety of substrates for heterostructure and integrated circuit technologies. The characteristics of VDWE include rotational alignment with the substrate, strain-free growth, and no misfit dislocations despite significant lattice
Walsh, Lee A., Hinkle, Christopher L.
openaire   +1 more source

Van der Waals Epitaxy of GaSe on GaAs(111)

MRS Proceedings, 1994
ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints.
L. E. Rumaner, F.S. Ohuchi
openaire   +1 more source

van der Waals epitaxy of Ge films on mica

Journal of Applied Physics, 2017
To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the
A. J. Littlejohn, Y. Xiang, E. Rauch, T.-M. Lu, G.-C. Wang   +4 more
openaire   +1 more source

Is all epitaxy on mica van der Waals epitaxy?

Materials Today Nano, 2022
N. Wang, X. Pan, P. Wang, Y. Wang, H. He, Y.-J. Zeng, L. Zhang, Y. Li, F. Wang, B. Lu, J. Huang, Z. Ye   +11 more
openaire   +1 more source