Results 51 to 60 of about 1,753 (147)

Wafer‐scale single‐crystalline MoSe2 and WSe2 monolayers grown by molecular‐beam epitaxy at low‐temperature — the role of island‐substrate interaction and surface steps

open access: yesNatural Sciences, 2023
Ultrathin two‐dimensional transition‐metal dichalcogenides (TMDs) have been pursued extensively in recent years for interesting physics and application potentials.
Yipu Xia   +19 more
doaj   +1 more source

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy

open access: yesNanomaterials
The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted ...
Iwan Susanto   +3 more
doaj   +1 more source

Van der Waals epitaxial growth of single-crystal molecular film

open access: yesNational Science Review
ABSTRACT Epitaxy is the cornerstone of semiconductor technology, enabling the fabrication of single-crystal film. Recent advancements in van der Waals (vdW) epitaxy have opened new avenues for producing wafer-scale single-crystal 2D atomic crystals. However, when it comes to molecular crystals, the overall weak vdW force means that it is
Lixin Liu   +11 more
openaire   +2 more sources

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

open access: yesMolecules
In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.
Shuo Ma   +6 more
doaj   +1 more source

Stabilizing Phosphorene‐Like Group IV–VI Compounds via van der Waals Imprinting for Multistate Ferroelectricity and Tunable Spin Transport

open access: yesAdvanced Electronic Materials
Layered group IV–VI compounds (i.e., SnSe, SnS, GeSe, and GeS) in the puckered structure resembling black‐phosphorene (BlackP) have attracted increasing interest because of their intriguing ferroic orders and outstanding thermoelectric properties.
Muhammad Usman Muzaffar   +4 more
doaj   +1 more source

Heterostructures based on inorganic and organic van der Waals systems

open access: yesAPL Materials, 2014
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers.
Gwan-Hyoung Lee   +9 more
doaj   +1 more source

Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides

open access: yesCrystals, 2018
Two dimensional (2D) materials have gained significant attention since the discovery of graphene in 2004. Layered transition metal dichalcogenides (TMDs) have become the focus of 2D materials in recent years due to their wide range of chemical ...
Haimei Qi   +6 more
doaj   +1 more source

Van der Waals Epitaxy of Weyl-Semimetal Td-WTe2

open access: yesACS Applied Materials & Interfaces
ACS Applied Materials and Interfaces ...
Llopez, Alexandre   +15 more
openaire   +4 more sources

Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities

open access: yesAPL Materials, 2020
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications.
Do Hee Lee   +3 more
doaj   +1 more source

Controlled epitaxy and patterned growth of one-dimensional crystals via surface treatment of two-dimensional templates

open access: yesnpj 2D Materials and Applications
Mixed-dimensional van der Waals (vdW) heterostructures offer promising platforms for exploring interesting phenomena and functionalities. To exploit their full potential, precise epitaxial processes and well-defined heterointerfaces between different ...
Myeongjin Jang   +10 more
doaj   +1 more source

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