Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut
We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee +12 more
wiley +1 more source
High-throughput electrophysiological assays for voltage gated ion channels using SyncroPatch 768PE. [PDF]
Li T +5 more
europepmc +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
The Concise Guide to PHARMACOLOGY 2015/16: Voltage-gated ion channels. [PDF]
Alexander SP +11 more
europepmc +1 more source
Harnessing Phase Separation for the Development of High‐Performance Hydrogels
ABSTRACT Hydrogels are indispensable for the development of next‐generation bioelectronics, soft robotics, and biomedical devices, where their mechanical properties determine performance and reliability. Among strategies to enhance hydrogel mechanics, phase separation enables controlled heterogeneity resulting in gel networks that are reinforced by ...
Yue Shao +3 more
wiley +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source
Effects of acidic pH on voltage-gated ion channels in rat trigeminal mesencephalic nucleus neurons. [PDF]
Han JE +4 more
europepmc +1 more source
Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa +10 more
wiley +1 more source

