Results 21 to 30 of about 341 (156)
The slicing of 4H silicon carbide (4H‐SiC) wafers is realized by combining femtosecond laser irradiation and bandgap‐selective photo‐electrochemical (PEC) exfoliation. Femtosecond‐laser irradiation leads to the formation of a damage layer consisting of amorphous silicon and amorphous carbon.
Wenhao Geng +7 more
wiley +1 more source
A newly developed hot embossing technique which uses the localized rapid heating of a thin carbide-bonded graphene (CBG) coating, greatly reduces the energy consumption and promotes the fabrication efficiency.
Lihua Li, Jian Zhou
doaj +1 more source
Dual Coil Patterned Ultra‐Thin Silicon Film Enable by Double‐Sided Process
Double‐sided processing on ultra‐thin silicon provides the opportunity to double the number of devices or create dual functionalities. As a demonstration, a dual coil patterned ultra‐thin silicon (DCUTS) is fabricated. DCUTS is then demonstrated as an actuating, energy harvesting, and vibrating mirror system.
ChangHee Son +3 more
wiley +1 more source
A refined additive manufacturing system of material extrusion type was developed considering the high-temperature conditions of extruder and chamber.
Seong Je Park +5 more
doaj +1 more source
Design and Fabrication of Wafer-Level Microlens Array with Moth-Eye Antireflective Nanostructures
Wafer-level packaging (WLP) based camera module production has attracted widespread industrial interest because it offers high production efficiency and compact modules.
Shuping Xie +5 more
doaj +1 more source
Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher I/O density compared to conventional soldering technology.
Yuan-Chiu Huang +4 more
doaj +1 more source
Analysis of Wafer Warpage in Diamond Wire Saw Slicing Sapphire Crystal
During the diamond wire saw cutting process of sapphire crystals, warpage is one of the key parameters for evaluating wafer quality. Based on the thermoelasticity theory and diamond wire saw cutting theory, a finite element model for thermal analysis of ...
Yihe Liu +3 more
doaj +1 more source
Warpage Measurement of Thin Wafers by Reflectometry
AbstractTo cope with advances in the electronic and portable devices, electronic packaging industries have employed thinner and larger wafers to produce thinner packages/ electronic devices. As the thickness of the wafer decrease (below 250um), there is an increased tendency for it to warp.
Ng, CHI SENG, Asundi, ANAND KRISHNA
openaire +1 more source
Electroless Ni–P plating films, used as the seed layers for the backside electrodes of gallium arsenide (GaAs) semiconductor devices, cause substrate warping (wafer warpage) during annealing, leading to substrate cracking and chipping.
Koichiro NISHIZAWA +6 more
doaj +1 more source
Electric-driven flexible-roller nanoimprint lithography on the stress-sensitive warped wafer
Surface nanopatterning of semiconductor optoelectronic devices is a powerful way to improve their quality and performance. However, photoelectric devices’ inherent stress sensitivity and inevitable warpage pose a huge challenge on fabricating ...
Yu Fan +8 more
doaj +1 more source

