Results 11 to 20 of about 23,327 (300)

Combined metal-assisted chemical etching and anisotropic wet etching for anti-reflection inverted pyramidal cavities on dendrite-like textured substrates

open access: yesResults in Physics, 2019
A simple and low-cost method using the combination of metal-assisted chemical etching (MacEtch) and anisotropic wet etching was performed to fabricate anti-reflection inverted pyramidal cavities on dendrite-like textured silicon substrates.
Yu-Keng Lin   +2 more
doaj   +2 more sources

Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation

open access: yesResults in Physics
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that are ...
Jun Hyeok Heo   +5 more
doaj   +2 more sources

Level Set Approach to Anisotropic Wet Etching of Silicon [PDF]

open access: yesSensors, 2010
In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented.
Branislav Radjenović   +2 more
doaj   +2 more sources

Nano-roughness Modification of 3D printed Poly (lactic Acid) Polymer via Alkaline Wet Etching Towards Biomedical Applications [PDF]

open access: yesJournal of Applied Science and Engineering
The developments of nano-roughness surface textures are important to implement enhanced osseointegration, cell adhesion, and proliferation in polymers for biomedical applications such as tissue engineering scaffolds and orthopaedic implants.
S. P. S. N Buddhika Sampath Kumara   +7 more
doaj   +2 more sources

WET ETCHING OF OPTICAL THIN FILMS

open access: yes, 2010
Evaluation of the wet etching properties of several different thin film oxidesgrown by physical vapour deposition was performed in this work. MgO, Al2O3,SiO2, TiO2, HfO2 ZrO2 and Y2O3 were coated on two types of substrates; Si andborosilicate glass and etching tests were performed in different etchingsolutions. MgF2 thin films have also been evaluated.
Edström, Curt
openaire   +3 more sources

Investigation of a Macromolecular Additive on the Decrease of the Aluminum Horizontal Etching Rate in the Wet Etching Process

open access: yesMetals, 2022
The effect of a macromolecular additive on the etching rate of aluminum (Al) horizontal etching in the wet process was investigated in this work. The horizontal etching in the Al wet etching process became more evident as the film Al becomes thicker. The
Jingxiu Ding   +4 more
doaj   +1 more source

Development of numerically controlled local wet etching

open access: yesScience and Technology of Advanced Materials, 2007
Numerically controlled local wet etching (NC-LWE) has been developed as a novel noncontact subaperture deterministic figuring method for fabricating ultraprecision optics or for finishing functional materials. In this method, a localized wet etching area
Kazuya Yamamura
doaj   +1 more source

Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions

open access: yesMicro and Nano Engineering, 2023
Ruthenium (Ru) is a noble metal and is known to be resistant to many common chemicals and mixtures. We report in this study a controlled etching/recessing of Ru via wet processing and a combination of dry and wet process using metal-free chemical ...
Q.T. Le   +9 more
doaj   +1 more source

Transmittance modulation by gold nanoparticle mediated wet chemical etching of silica

open access: yes, 2023
Wet etching in hydrofluoric acid (HF) is one of the most common routes for the surface texturing of silica, leading to improved optical properties, which find applications in several fields.
Neethu, Thomas, Parasuraman, Swaminathan
core   +1 more source

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

open access: yesNanomaterials, 2022
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel
Buqing Xu   +9 more
doaj   +1 more source

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