Results 31 to 40 of about 490,111 (287)

Level Set Approach to Anisotropic Wet Etching of Silicon

Sensors, 2010
In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented.
Branislav Radjenović, Marija Radmilović-Radjenović, Miodrag Mitrić   +2 more
doaj   +1 more source

The study of wet etching on GaN surface by potassium hydroxide solution

, 2017
Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260 °C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process.
Lai, Yung-Yu; Hsu, Shih-Chieh; Chang, Hua-Sheng; Wu, YewChung Sermon; Chen, Ching-Hsiang; Chen, Liang-Yih; Cheng, Yuh-Jen
core   +1 more source

Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

International Journal of Photoenergy, 2014
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition.
Hsu-Hung Hsueh, Sin-Liang Ou, Chiao-Yang Cheng, Dong-Sing Wuu, Ray-Hua Horng   +4 more
doaj   +1 more source

Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching [PDF]

, 2015
The piezoresistive effect in silicon nanowires (SiNWs) has attracted a great deal of interest for NEMS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as electron ...
Nguyen, Nam-Trung, Phan, Hoang Phuong, Dao, Dzung, Dinh, Toan, Nam-Trung, Nguyen, Zhu, Yong, Hoang-Phuong, Phan, Dao, Dzung Viet, Qamar, Afzaa, Namazu, Takahiro, Fujii, Tatsuya, Qamar, Afzaal, Kozeki, Takahiro, Phan, Hoang-Phuong   +13 more
core   +1 more source

Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants

Nanoscale Research Letters, 2019
Wet etching offers an advantage as a soft, damage-less method to remove sacrificial material with close to nanometer precision which has become critical for the fabrication of nanoscale structures.
Antoine Pacco, Zheng Tao, Jens Rip, Dennis van Dorp, Harold Philipsen, Frank Holsteyns   +5 more
doaj   +1 more source

Investigation onto the Effect of Surface Etching using Chemical Etchants on the Dye-Ability of UHMWPE Fibre

Mehran University Research Journal of Engineering and Technology, 2021
Ultra high molecular weight fibre cannot be dyed using conventional dyeing techniques as they are extremely hydrophobic and do not possess any polar groups. Wet etching of the surface was used as the pre-treatment process to improve the dyeability of the
Salma Farooq, Fareha Asim, Sheraz Hussain Siddique, Saira Faisal   +3 more
doaj   +1 more source

Fabrication Routes for Ionic Conducting Fiber Strain Sensors

Advanced Engineering Materials, EarlyView.
Ionic conducting fiber strain sensors (ICFSs) offer compliant, textile‐integrable sensing. Thus far, the commercialization of ICFSs has been constrained by fiber fabrication routes. This review provides a fabrication‐centric analysis of ICFSs correlating processing strategies with material properties and scalability.
Leo John Kershaw, Zhanhong Yang, Anne Ladegaard Skov, Magdalena Skowyra   +3 more
wiley   +1 more source

Etching of quartz crystals in liquid phase environment: A review

Nanotechnology and Precision Engineering
Quartz crystals are the most widely used material in resonant sensors, owing to their excellent piezoelectric and mechanical properties. With the development of portable and wearable devices, higher processing efficiency and geometrical precision are ...
Yide Dong, Yike Zhou, Haizhou Huang, Bosong Zhang, Xihan Li, Kaiwen Chen, Litao Sun, Guangbin Dou   +7 more
doaj   +1 more source

An Investigation of Processes for Glass Micromachining

Micromachines, 2016
This paper presents processes for glass micromachining, including sandblast, wet etching, reactive ion etching (RIE), and glass reflow techniques.
Nguyen Van Toan, Masaya Toda, Takahito Ono   +2 more
doaj   +1 more source

Rapidly Solidified High‐Strength Invar 36 Prepared by Planar‐Flow Melt Spinning

Advanced Engineering Materials, EarlyView.
The Invar 36 alloy was rapidly solidified using the planar‐flow melt‐spinning technique. Ribbon samples with thicknesses ranging from 20 to 160 mm were produced. As the grain size of the ribbon decreased to sub‐micron levels, the hardness increased by more than 2 times.
Bekir Akgül, Mehmet Kul
wiley   +1 more source