Results 21 to 30 of about 23,327 (300)

Wet etching of gold on graphene for high-quality resist-free graphene surfaces

open access: yesNano Express, 2023
Wet etching of gold on graphene is challenging due to the weak adhesion of the resist mask to graphene. We report an operating procedure for alkali ion-free wet etching of gold on graphene using a mixture of hydrochloric and nitric acids (aqua regia ...
J Kunc, M Shestopalov, J Jo, K Park
doaj   +1 more source

Reactive Ion Etching Process of Micro Mechanical Pendulum

open access: yesMATEC Web of Conferences, 2017
This paper describes the reactive ion etching (RIE) technique of micro mechanical pendulum chip. Micro mechanical pendulum chip processed by the RIE has excellent performances and surface of the chip is smoother than the chip by wet etching.
Zhang Wei   +3 more
doaj   +1 more source

Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching [PDF]

open access: yes, 2015
The piezoresistive effect in silicon nanowires (SiNWs) has attracted a great deal of interest for NEMS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as electron ...
Nguyen, Nam-Trung   +13 more
core   +1 more source

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

open access: yesBeilstein Journal of Nanotechnology, 2016
The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is ...
Siti Noorhaniah Yusoh   +1 more
doaj   +1 more source

Research Review of InAs/GaSb Superlattice Mesa Etching Process [PDF]

open access: yesHangkong bingqi
This paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to ...
Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
doaj   +1 more source

Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer [PDF]

open access: yesEngineering and Technology Journal, 2012
In this work، anisotropic silicon etch using KOH ، optical microscopic and X-ray diffraction testing، were used to determine the crystal orientation of the silicon wafer(100) plane , where the mechanical polishing and wet etching described the geometric ...
Saria D.mohammed   +2 more
doaj   +1 more source

Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

open access: yesNanomaterials, 2021
As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages.
Jiaqi Zhang   +7 more
doaj   +1 more source

Preparation of small silicon carbide quantum dots by wet chemical etching

open access: yes, 2013
Fabrication of nanosized silicon carbide (SiC) crystals is a crucial step in many biomedical applications. Here we report an effective fabrication method of SiC nanocrystals based on simple electroless wet chemical etching of crystalline cubic SiC ...
Szekrényes, Zsolt   +5 more
core   +1 more source

Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

open access: yesInternational Journal of Photoenergy, 2014
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition.
Hsu-Hung Hsueh   +4 more
doaj   +1 more source

The study of wet etching on GaN surface by potassium hydroxide solution

open access: yes, 2017
Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260 °C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process.
Lai, Yung-Yu; Hsu, Shih-Chieh; Chang, Hua-Sheng; Wu, YewChung Sermon; Chen, Ching-Hsiang; Chen, Liang-Yih; Cheng, Yuh-Jen
core   +1 more source

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