Results 21 to 30 of about 80,250 (296)

Research Review of InAs/GaSb Superlattice Mesa Etching Process [PDF]

Hangkong bingqi
This paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to ...
Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
doaj   +1 more source

Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer [PDF]

Engineering and Technology Journal, 2012
In this work، anisotropic silicon etch using KOH ، optical microscopic and X-ray diffraction testing، were used to determine the crystal orientation of the silicon wafer(100) plane , where the mechanical polishing and wet etching described the geometric ...
Saria D.mohammed, Arrej Rlyadh Saeed, Atheer Ibraheem Bbd   +2 more
doaj   +1 more source

Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

Nanomaterials, 2021
As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages.
Jiaqi Zhang, Yichang Wu, Guofang Yang, Dazheng Chen, Jincheng Zhang, Hailong You, Chunfu Zhang, Yue Hao   +7 more
doaj   +1 more source

Three-dimensional femtosecond laser nanolithography of crystals [PDF]

, 2019
Nanostructuring hard optical crystals has so far been exclusively feasible at their surface, as stress induced crack formation and propagation has rendered high precision volume processes ineffective. We show that the inner chemical etching reactivity of
A Banerjee, Airán Ródenas, Ajoy K. Kar, DE Zelmon, DR Smith, E Yablonovitch, EG Gamaly, EN Glezer, G Zhou, Giacomo Corrielli, J Basterfield, J Bauer, J Fischer, J Schindelin, JC Knight, JD Joannopoulos, JG Rarity, JK Gansel, JM Dudley, K Jain, K McGarvey-Lechable, LR Meza, M Deubel, M Hermatschweiler, M Straub, MD Henry, Min Gu, P Russell, Petra Paiè, RA Shelby, RJA Francis-Jones, Roberto Osellame, S John, S Juodkazis, S Juodkazis, S Maruo, S Wong, Sajeev John, T Clausnitzer, TJ Kippenberg   +39 more
core   +2 more sources

Level Set Approach to Anisotropic Wet Etching of Silicon

Sensors, 2010
In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented.
Branislav Radjenović, Marija Radmilović-Radjenović, Miodrag Mitrić   +2 more
doaj   +1 more source

Recrystallized parylene as a mask for silicon chemical etching [PDF]

, 2008
This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350°C for 2 hours.
Kuo, Wen-Cheng, Lo, Hsi-wen, Tai, Yu-Chong, Yang, Yao-Joe   +3 more
core   +2 more sources

Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation

Results in Physics
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that are ...
Jun Hyeok Heo, Sang Ho Lee, Jin Park, Ga Eon Kang, Young Jun Yoon, In Man Kang   +5 more
doaj   +1 more source

Direct printing of polymer microstructures on flat and spherical surfaces using a letterpress technique [PDF]

, 2002
We have developed a letterpress technique capable of printing polymer films with micrometer scale feature sizes onto flat or spherically shaped nonporous substrates.
Miller, Scott M., Troian, Sandra M., Wagner, Sigurd   +2 more
core   +1 more source

Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

International Journal of Photoenergy, 2014
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition.
Hsu-Hung Hsueh, Sin-Liang Ou, Chiao-Yang Cheng, Dong-Sing Wuu, Ray-Hua Horng   +4 more
doaj   +1 more source

Wet chemical etching survey of III-nitrides [PDF]

Solid-State Electronics, 1997
AbstractWet chemical etching of GaN, InN, AIN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75°C. Only KOH-based solutions were found to etch AIN and InAlN. No etchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity.
Department of Materials Science and Engineering, University of Florida Gainesville FL 32611, U.S.A. ( host institution ), Vartuli, C.B. ( author ), Pearton, S.J. ( author ), Abernathy, C.R. ( author ), MacKenzie, J.D. ( author ), Ren, F. ( author ), Zolper, J.C. ( author ), Shul, R.J. ( author )   +7 more
openaire   +2 more sources