Results 11 to 20 of about 13,430 (257)

Spintronics And Ferromagnetism In Wide-Band-Gap Semiconductors [PDF]

AIP Conference Proceedings, 2005
AbstractFor Abstract see ChemInform Abstract in Full Text.
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FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

AIP Advances, 2017
The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer.
Garuma Abdisa Denu, Jibran Hussain Mirani, Jiao Fu, Zongchen Liu, Hongxing Wang   +4 more
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Optoelectronic Switches Based on Wide Band Gap Semiconductors

The Journal of Physical Chemistry B, 2006
Switching of photocurrent direction in semiconducting systems upon changes of the electrode potential or incident light wavelength was realized by a series of photoelectrodes covered with titania modified with pentacyanoferrate complexes, [Fe(CN)(5)L](n)(-) (L = NH(3), thiodiethanol, thiodipropanol).
Hebda, Maciej, Stochel, Grażyna, Szaciłowski, Konrad, Macyk, Wojciech   +3 more
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Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators

AIP Advances, 2017
The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu, Jiao Fu, Zongchen Liu, Jibran Hussain Mirani, Hongxing Wang   +4 more
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The Study on Fabrication and Characterization of Al_0.2In_0.8Sb/InAs_0.4Sb_0.6 Heterostructures by Molecular Beam Epitaxy

IEEE Access, 2019
Al0.2In0.8Sb/InAs0.4Sb0.6 heterostructures have been successfully grown on GaAs substrate by molecular beam epitaxy (MBE). The influence of three different metamorphic buffer layers on the transport properties and crystal quality of the samples has been ...
Jing Zhang, Hongliang Lv, Yifeng Song, Haiqiao Ni, Zhichuan Niu, Yuming Zhang   +5 more
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Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN

International Journal of Smart and Nano Materials, 2020
Two-dimensional (2D) semiconductors exhibit great potential to minimize the size and drastically reduce the energy consumption of optoelectronic devices due to promising features induced by quantum confinement.
Wantong Hou, Zhanbin Qi, Hang Zang, Yan Yan, Zhiming Shi   +4 more
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A finite element analysis of the effects of geometrical shape on the elastic properties of chemical vapor deposited diamond nanowire

AIP Advances, 2017
We report the effect of geometrical shape of diamond nanowire on its mechanical properties. Finite element modeling using COMSOL Multiphysics software is used to simulate various diamond nanowire with circular, square, rectangular, hexagonal and ...
Garuma Abdisa Denu, Zongchen Liu, Jiao Fu, Hongxing Wang   +3 more
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Efficient GW calculations in two dimensional materials through a stochastic integration of the screened potential

npj Computational Materials, 2023
Many-body perturbation theory methods, such as the G 0 W 0 approximation, are able to accurately predict quasiparticle (QP) properties of several classes of materials.
Alberto Guandalini, Pino D’Amico, Andrea Ferretti, Daniele Varsano   +3 more
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Implanted Impurities in Wide Band Gap Semiconductors [PDF]

Defect and Diffusion Forum, 2011
Wide band gap semiconductors, mainly GaN, have experienced much attention due to their application in photonic devices and high-power or high-temperature electronic devices. Especially the synthesis of InxGa1-xN alloys has been studied extensively because of their use in LEDs and laser diodes. Here, In is added during the growth process and devices are
P. Keßler, K. Lorenz, R. Vianden
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Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors

Energies, 2018
In this short communication, we conducted first-principles calculations to explore the stability of boron monochalcogenides (BX, X = S, Se or Te), as a new class of two-dimensional (2D) materials.
Bohayra Mortazavi, Timon Rabczuk
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