Results 41 to 50 of about 13,430 (257)

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

AIP Advances, 2015
We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory.
Zheng Huang, Tie-Yu Lü, Hui-Qiong Wang, Jin-Cheng Zheng   +3 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Tunable chiral spin–spin interactions in a spin-mechanical hybrid system: application to causal-effect simulation

New Journal of Physics
Long-range chiral interactions are very attractive due to their potential applications in quantum simulation and quantum information processing. Here we propose and analyze a novel spin-mechanical hybrid quantum device for designing and engineering ...
Bo Li, Xiaoxiao Li, Xixiang Zhao, Yanpeng Zhang, Hongxing Wang, Feng Li   +5 more
doaj   +1 more source

Ultrathin high band gap solar cells with improved efficiencies from the world’s oldest photovoltaic material

Nature Communications, 2017
Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve ...
Teodor K. Todorov, Saurabh Singh, Douglas M. Bishop, Oki Gunawan, Yun Seog Lee, Talia S. Gershon, Kevin W. Brew, Priscilla D. Antunez, Richard Haight   +8 more
doaj   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process

Advances in Condensed Matter Physics, 2019
As an indirect band gap semiconductor, germanium (Ge) can be transformed into a direct band gap semiconductor through some specific modified methods, stress, and alloying effect. Direct band gap-modified Ge semiconductors with a high carrier mobility and
Xiaohuan Xue, Jianjun Song, Rongxi Xuan
doaj   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

Advanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang, Max Gießübel, Pankaj Dharpure, Andrea Albert, Vira Niestierkina, Paul Mulvaney, Mukundan Thelakkat, Jürgen Köhler   +7 more
wiley   +1 more source

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

IEEE Journal of the Electron Devices Society, 2020
GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration.
Ying Wang, Liu-An Li, Chong Li, Jin-Ping Ao, Xiao Wang, Yue Hao   +5 more
doaj   +1 more source

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

Advanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich, Paul Markus, Matthias Stöter, Bernhard Biersack, Rainer Schobert, Josef Breu, Georg Papastavrou   +6 more
wiley   +1 more source

Experimental and Numerical Evaluation of R_ON Degradation in GaN HEMTs During Pulse-Mode Operation

IEEE Journal of the Electron Devices Society, 2017
The on-resistance (RON) degradation in normally-OFF GaN high electron mobility transistors has been evaluated both experimentally and by means of numerical simulations by analyzing its drift during device pulse-mode operation.
Alessandro Chini, Ferdinando Iucolano
doaj   +1 more source