Results 51 to 60 of about 13,430 (257)
Impact ionization rate calculations in wide band gap semiconductors [PDF]
An algorithm for calculating impact ionization rates in the semiclassical Fermi’s Golden Rule approximation which is efficient close to threshold is presented. Electron and hole initiated rates are calculated for three semiconductors with particular band structure characteristics, as are the distributions of the generated carriers.
Harrison, D., Abram, R.A., Brand, S.
openaire +2 more sources
Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
Fingerprinting quantum emitters in hexagonal boron nitride using strain
Two-dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide-band-gap semiconductors as hosts of single-photon emitters.
Pratibha Dev
doaj +1 more source
Exploring the photocatalytic reverse water–gas shift (RWGS) reaction on doped SrTiO3 nanoparticle films, reveals that normalizing catalytic rates by the catalyst's specific surface area (SSA) disentangled surface area effects from the catalyst's intrinsic material properties.
Dikshita Bhattacharyya +6 more
wiley +1 more source
Photoswitching Conduction in Framework Materials
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez +4 more
wiley +1 more source
Elastic anisotropy and electronic properties of Si3N4 under pressures
First principles calculations are performed to systematically investigate the electronic structures, elastic, anisotropic and electronic properties of the monoclinic, tetragonal and orthorhombic structures of Si3N4 under pressure. Anisotropy studies show
Qingyang Fan +4 more
doaj +1 more source
We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene.
Anastasiia G. Solomenko +3 more
doaj +1 more source
Backbone Heterojunction Photocatalysts for Efficient Sacrificial Hydrogen Production
Herein, a ‘single‐component’ organic semiconductor photocatalyst is presented in which a molecular donor is bonded to a polymer acceptor. The resultant material demonstrates exceptional photocatalytic activity for hydrogen evolution in aqueous triethylamine with an outstanding external quantum efficiency of 38% at 420 nm.
Richard J. Lyons +11 more
wiley +1 more source
Naturally occurring 2D semiconductor with antiferromagnetic ground state
The natural clay mineral vermiculite has been overlooked as a promising candidate for scalable production of large aspect ratio 2D wide band-gap semiconductors.
Barbara Pacakova +10 more
doaj +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source

