Results 251 to 260 of about 140,062 (302)

Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019
We advance the localized work-function fluctuation (LWKF) method to examine the variability of threshold voltage $(\mathrm{V}_{\mathrm{t}\mathrm{h}})$ induced by titanium nitride (TiN) metal-gate work-function fluctuation (WKF) and combined the WKF with the random dopant fluctuation (RDF) for various grain sizes on Si gate-all-around (GAA) nanowire (NW)
Wen-Li Sung, Min-Hui Chuang, Yiming Li   +2 more
exaly   +2 more sources

Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

2015 IEEE International Electron Devices Meeting (IEDM), 2015
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied.
Yiming Li, Chieh-Yang Chen
exaly   +2 more sources

Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2014
Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV.
Shinji Migita
exaly   +2 more sources

Work-Function Fluctuation Impact on the SET Response of FinFET-based Majority Voters

2020 IEEE Latin-American Test Symposium (LATS), 2020
The evolution of integrated circuits, alongside the technology scaling, has made them more susceptible to the radiation effects, as well presenting an increasing manufacturing process variability. These challenges can lead to circuits operating outside their specification ranges. Majority voters are adopted by most of the redundancy-based methodologies
Leonardo Heitich Brendler, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis   +3 more
openaire   +1 more source

Impact of Work Function Fluctuations on Threshold Voltage Variability in a Nanoscale FinFETs

2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS), 2016
In todays advanced nanoscale regime, use of metal gate stacks have a different impact on the intrinsic parameter variability. The metal gates have a natural granular structure, where work function of each grain depends upon its orientation. Circuit and device designing are limited by the threshold voltage variability.
Rituraj Singh Rathore, Rajneesh Sharma, Ashwani K. Rana   +2 more
openaire   +1 more source

Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001
The relation between the work function and current fluctuation was investigated for various kinds of emitters: element metals, transition metal nitrides, and diamonds. Since these deposited emitters have no good standard, it is difficult to distinguish the effect of work function and the other physical parameters such as apex radius.
Gotoh, Y, Tsuji, H, Ishikawa, J
openaire   +1 more source

A New Modeling Approach for the Probability Density Distribution Function of Wind power Fluctuation

Sustainability, 2019
With the rapid development of grid-connected wind power, analysing and describing the probability density distribution characteristics of wind power fluctuation has always been a hot and difficult problem in the wind power field.
Fucai Qian, Wang Lingzhi
exaly   +2 more sources

Implications of Work-Function Fluctuation on Radiation Robustness of FinFET XOR Circuits

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017
Traditional CMOS technology has reached its limit in the deep submicron era. Hence, advanced technology nodes require novel device structures and new materials to overcome the challenges faced when dealing with planar devices for nanocircuits. As technology scales down, the circuits are becoming more susceptible to the increase of the uncertainty ...
Y. Q. Aguiar, F. L. Kastensmidt, C. Meinhardt, L. Artola, G. Hubert, R. Reis   +5 more
openaire   +1 more source

SET response of FinFET-based majority voter circuits under work-function fluctuation

2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2017
This work evaluates the SET response of FinFET-based Majority Voter circuits under the process-variability impact of metal-gate Work-Function Fluctuation (WFF). Results show that SET pulsewidth is expected to increase under WFF effects. Moreover, results show that the relative standard deviation of the SET pulses can increase from 50% up to 80 ...
Y. Q. de Aguiar, Fernanda Lima Kastensmidt, Cristina Meinhardt, Ricardo A. L. Reis   +3 more
openaire   +1 more source

Variability analysis of the epitaxial layer TFET due to gate work function variation, random dopant fluctuation, and oxide thickness fluctuation using the statistical impedance field method

Semiconductor Science and Technology, 2022
Abstract In this paper, a comparative study on process variability considering work function variation (WFV), random dopant fluctuation (RDF), and oxide thickness fluctuation (OTF) in epitaxial layer tunnel field effect transistor (TFET) with SiGe source (SiGe-ETLTFET) is statistically analyzed using impedance field method (IFM) in ...
Radhe Gobinda Debnath, Srimanta Baishya
openaire   +1 more source