Results 271 to 280 of about 140,062 (302)

Physical Insight and Correlation Analysis of Finshape Fluctuations and Work-Function Variability in FinFET Devices

2013
One of the major challenges that technology evolution has been facing in the last few years is the increasing severity of variability associated with the discrete nature of charge and the atomicity of matter, which become relevant in aggressively scaled devices.
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Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels

Japanese Journal of Applied Physics, 2014
Influence of work function variation (WFV) in metal gates (MGs) on fluctuation of sub-threshold drain current is investigated in detail by analyzing fluctuation of current–onset voltage (COV) for fin field-effect transistors (FinFETs) with polycrystalline TiN and amorphous TaSiN MGs.
Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Shinichi O’uchi, Wataru Mizubayashi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Meishoku Masahara   +11 more
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Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-k-metal-gate material

2010 14th International Workshop on Computational Electronics, 2010
Random work-function (WK) induced threshold voltage fluctuation (σV th ) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σV th are studied ...
Hui-Wen Cheng, Yiming Li
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Impact on Radiation Robustness of Gate Mapping in FinFET Circuits under Work-function Fluctuation

2023 IEEE International Symposium on Circuits and Systems (ISCAS), 2023
Bernardo Borges Sandoval, Leonardo Heitich Brendler, Fernanda Lima Kastensmidt, Ricardo Reis 0001, Alexandra L. Zimpeck, Rafael B. Schvittz, Cristina Meinhardt   +6 more
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Transfer learning approach to analyzing the work function fluctuation of gate-all-around silicon nanofin field-effect transistors

Computers and Electrical Engineering, 2022
Chandni Akbar, Yiming Li 0005, Wen-Li Sung   +2 more
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Significance of Work Function Fluctuations in SiGe/Si Hetero-Nanosheet Tunnel-FET at Sub-3 nm Nodes

IEEE Transactions on Electron Devices, 2022
Narasimhulu Thoti, Yiming Li, Wen-Li Sung   +2 more
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Flash glucose monitoring data analysed by detrended fluctuation function on beta‐cell function and diabetes classification

Diabetes, Obesity and Metabolism, 2021
Xiaoling Cai, Xueyao Han, Linong Ji
exaly  

Deep Learning Approach to Estimating Work Function Fluctuation of Gate-All-Around Silicon Nanosheet MOSFETs with A Ferroelectric HZO Layer

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022
Rajat Butola, Yiming Li, Sekhar Reddy Kola   +2 more
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Intelligent Modeling of Electrical Characteristics of Multi-Channel Gate All Around Silicon Nanosheet MOSFETs Induced by Work Function Fluctuation

2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022
Chandni Akbar, Yiming Li, Wen-Li Sung
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Reducing the fluid fluctuation of three-cylinder ERD by optimizing the overlap function and improving the resistance loss uniformity

Desalination, 2021
Yue Wang, Shichang Xu
exaly