Results 261 to 270 of about 140,062 (302)
Some of the next articles are maybe not open access.
IEEE Transactions on Electron Devices, 2021
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML model, the random forest regressor (RFR) is explored to predict the characteristic variation of the explored device. The proposed ML-RFR algorithm for predicting the ${I} _{
Chandni Akbar, Yiming Li, Wen Li Sung
openaire +1 more source
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML model, the random forest regressor (RFR) is explored to predict the characteristic variation of the explored device. The proposed ML-RFR algorithm for predicting the ${I} _{
Chandni Akbar, Yiming Li, Wen Li Sung
openaire +1 more source
Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010The work-function fluctuation (WKF) induced threshold voltage variability (σV th ) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of ...
Chih-Hong Hwang, Yiming Li
openaire +1 more source
Journal of Nanoscience and Nanotechnology, 2012
The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach.
Yiming, Li +2 more
openaire +2 more sources
The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach.
Yiming, Li +2 more
openaire +2 more sources
Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs
2017This paper considers gate capacitance fluctuation due to work-function variation (WFV) in metal-gate Fin-type field-effect-transistors (FinFETs). The study shows that there exist correlations between gate trans-capacitance variations. Also, an analytical statistical model is presented to capture total gate capacitance variation based on the ...
Wei-feng Lü, Mi Lin, Haipeng Zhang 0003
openaire +1 more source
Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects [PDF]
IEEE Transactions on Electron Devices, 2017 A new technique developed for the analysis of intrinsic sources of variability affecting the performance of semiconductor devices is presented. It is based on the creation of a fluctuation sensitivity map (FSM), which supplies spatial information about the source of variability affecting the device performance and reliability, providing useful advice ...
Guillermo Indalecio +3 more
openaire +3 more sources
IEEE Transactions on Semiconductor Manufacturing, 2012
In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation (σVth) of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced σVth, nanosized metal grains with different gate materials are considered in a large-scale statistical ...
Yiming Li, Hui-Wen Cheng
openaire +1 more source
In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation (σVth) of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced σVth, nanosized metal grains with different gate materials are considered in a large-scale statistical ...
Yiming Li, Hui-Wen Cheng
openaire +1 more source
Semiconductor Science and Technology, 2020
Abstract In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM).
Min Soo Bae, Ilgu Yun
openaire +1 more source
Abstract In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM).
Min Soo Bae, Ilgu Yun
openaire +1 more source
2019 IEEE Conference on Information and Communication Technology, 2019
This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film
Avaneesh K. Dubey +4 more
openaire +1 more source
This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film
Avaneesh K. Dubey +4 more
openaire +1 more source
IEEE Electron Device Letters, 2016
This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator.
Sk Masum Nawaz, Abhijit Mallik
openaire +1 more source
This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator.
Sk Masum Nawaz, Abhijit Mallik
openaire +1 more source
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010), 2010
The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI off / σI on are drawn; the device with high AR and large number of silicon fin can suppress the WKF.
Hui-Wen Cheng, Yiming Li
openaire +1 more source
The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI off / σI on are drawn; the device with high AR and large number of silicon fin can suppress the WKF.
Hui-Wen Cheng, Yiming Li
openaire +1 more source