Results 11 to 20 of about 4,190 (168)

Preparation and Characterization of Sulfur Modified Lithium Iron Silicates as Cathode Materials [PDF]

open access: yes, 2016
硅酸铁锂作为一种新型的聚阴离子型正极材料,具有原料丰富、结构稳定、理论容量高等优点,有望成为理想的动力电池正极材料。硅酸铁锂完全脱出两个锂离子对应的理论容量高达333mAh/g,但由于第二个锂离子的脱嵌电压过高和体积变化过大,硅酸铁锂只能脱出一个锂离子。硫改性能有效地降低硅酸铁锂的脱嵌电压和结构破坏,从而实现第二个锂离子的脱嵌,因此,有必要探索硫取代硅酸铁锂的合成方法,从而制备出高性能的硫取代硅酸铁锂正极材料。本论文采用溶胶-凝胶和固相烧结法,以硫脲作为硫源 ...
张存皓
core  

Electrospinning Synthesized Cd0.3Zn0.7S@PVDF/PAN Piezoelectric Nanofiber Membrane for Efficient Photocatalytic Hydrogen Evolution

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Photocatalytic hydrogen evolution technology is a crucial approach to achieve efficient solar energy conversion and green hydrogen production. However, traditional semiconductor photocatalysts often face issues such as weak visible‐light response, high photogenerated charge carrier recombination, and poor structural stability, severely ...
Longtao Guo   +8 more
wiley   +1 more source

Fe离子掺杂对ZnO压敏电阻性能的影响

open access: yesDianci bileiqi, 2023
笔者主要研究了Fe3+离子掺杂引入对ZnO基压敏电阻微观结构及综合电气性能的影响。实验结果表明,随着铁离子掺杂量的增加,ZnO压敏电阻的电位梯度持续不断升高,非线性系数先升高而后降低,漏流先减小再增大,压比逐渐增加。分析认为,掺杂少量Fe3+时,可作为受主元素提高表面态密度,从而使非线性系数升高;随着掺杂量的增加,Fe3+转变为Fe2+进入ZnO晶粒内部,作为替位离子取代了部分Zn2+,由于r(Fe2+)>r(Zn2+),该取代产生了压应力对ZnO晶格产生挤压,减小晶格空隙,从而阻止了其他掺杂离子的进入,
李竹韵   +6 more
doaj  

Garnet and LISICON-type Solid Electrolytes: Synthesis, Performance and Ionic Diffusion Dynamics [PDF]

open access: yes, 2015
相对于有机液体电解液,无机固体电解质在化学与电化学稳定性方面具有无可比拟的优势,能极大提升锂离子电池安全性能及其循环稳定性,近年来成为可充锂(离子)电池研究者所关注的热点。其中,对Li4SiO4-Li3PO4(LISICON)体系的研究已经有近30年的历史,由于其较低的原料成本、较为容易的合成条件及良好的稳定性,研究者对该体系依然保持着很高的研究兴趣。Garnet型固体电解质是新兴锂离子导体,由于其具有高Li+电导率和良好的稳定性,一问世便引起工作者极大的研究兴趣 ...
王大为
core  

Edge‐Fluorinated Flower‐Like Porous Graphene Microspheres With Enlarged Interlayer Spacing for High‐Performance Potassium‐Ion Batteries

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT The utilization of carbonaceous anodes in electrochemical systems, particularly potassium‐ion batteries (PIBs), remains hindered by sluggish kinetics and modest capacities, which are caused by the intrinsic ion storage mechanisms and constrained interlayer spacings.
HaiSong Chen   +7 more
wiley   +1 more source

Synthesis and doping modification of high voltage LiNi0.5Mn1.5O4 cathode material [PDF]

open access: yes, 2015
目前商品化的锂离子电池的正极材料主要使用钴酸锂材料,但是钴酸锂材料面临钴的价格昂贵、资源缺乏以及污染环境等问题,同时钴酸锂也不能满足电动汽车等方面对动力锂离子电池在能量密度上的要求。尖晶石LiNi0.5Mn1.5O4材料是下一代锂离子电池正极材料的研究热点之一,具有147mAhg-1的理论比容量,以及高的充放电平台(4.7VvsLi/Li+),可以为电池提供平稳的工作电压,是很有应用前景的锂离子电池正极材料。但是作为锂离子电池正极材料,LiNi0.5Mn1.5O4仍然存在充放电循环性能差 ...
方俊川
core  

Investigating the Origin of Topological‐Hall‐Like Resistivity in Zn‐Doped Mn2Sb Ferrimagnet

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Skyrmions and other chiral spin textures have been extensively studied as potential building blocks for novel spintronic devices. Hall‐resistivity anomalies that deviate from magnetization scaling, known as the topological Hall effect, have been widely employed as evidence for the presence of chiral spin textures in magnetic materials. However,
BoCheng Yu   +9 more
wiley   +1 more source

稀土掺杂氧化锌压敏瓷的研究进展

open access: yesDianci bileiqi, 2009
综述了近年来稀土掺杂氧化锌压敏瓷中的研究进展。掺杂稀土氧化物可明显的减小ZnO晶粒尺寸,使晶粒尺寸分布均匀;其中掺杂Y2O3可使ZnO-Bi2O3系压敏瓷晶粒尺寸由11.3μm降到5.4μm,掺杂Er2O3使晶粒尺寸由1.60μm减小到1.06μm。显著提高了ZnO压敏瓷的电位梯度、降低了漏电流。其中在ZnO-Bi2O3系压敏瓷中掺杂Y2O3,可获得电位梯度约为270 V/mm、漏电流为3μA、压比为1.66的电阻片,在ZnO-PrA6O11系压敏瓷中掺杂Er2O3,电位梯度可提高到416.3 V/mm,
巫欣欣   +4 more
doaj  

CaCu3Ti4-xZrxO12薄膜压敏及介电性能的研究

open access: yesDianci bileiqi, 2020
采用溶胶-凝胶法成功制备了梯度掺杂CaCu3Ti4-xZrxO12(x=0、0. 05、0. 10、0. 15、0. 20)薄膜。通过X射线衍射及扫描电镜对其相结构及显微组织进行分析;采用压敏电阻直流参数仪和精密阻抗分析仪对其压敏和介电性能进行研究。研究结果表明,Zr梯度掺杂不仅能显著降低CCTO薄膜的晶粒尺寸,而且提高其非线性系数。相比于下梯度掺杂,Zr上梯度掺杂CCTO薄膜综合电性能最好,其中非线性系数为α=8. 3,漏电流IL=102μA,压敏电压VT=7. 44 V/mm,介电损耗tanδ=0.
郁倩   +4 more
doaj  

The Study of Band Engineering and Polarization-induced Doping in AlGaN-based Deep Ultraviolet Light-Emitting Diode [PDF]

open access: yes, 2016
Ⅲ族氮化物作为新一代半导体材料,具有宽直接带隙、高电子漂移率、高热导率、耐高温、抗腐蚀、抗辐射等优点,适合制作高频、高功率、耐高温和抗辐射的电子器件,比如AlGaN基紫外发光二极管。但是紫外发光二极管依然存在低量子效率、低光输出功率等问题,提高晶体质量和载流子注入效率是解决问题的两个主要思路。影响载流子注入效率的一个重要因素是内部极化场引起的能带弯曲,本文基于APSYS软件,主要围绕紫外LED的能带调控和极化诱导掺杂展开研究。 首先,本文回顾了紫外LED的发展历程,介绍了AlGaN半导体材料的结构和性质,
刘松青
core  

Home - About - Disclaimer - Privacy