Results 21 to 30 of about 471 (119)
通流容量是ZnO压敏电阻的重要的电气参数,其大小决定着避雷器性能的优劣。笔者研究了B2O3和Ga2O3掺杂对ZnO压敏电阻预击穿区和翻转区下的电流-电压特性的影响。在预击穿区,B3+和Ga3+的掺杂提高了样品的晶界势垒,抑制了泄漏电流的增加,从而改善了样品在工作条件下的老化稳定性。而在翻转区,三价施主离子(B3+和Ga3+)的掺杂致使I-V曲线右移,扩大了样品的非线性区,提高了样品对高脉冲电流放电的能力。掺杂0.3(摩尔分数)B2O3、0.1(摩尔分数)Ga2O3的样品具有优异的电气性能 ...
程宽, 赵洪峰, 周远翔
doaj
The Microstructure Evolution and Mechanical Properties of (FeCoCrNi)100‐x(AlCu)x High‐Entropy Alloys
ABSTRACT This study systematically investigates the effects of AlCu addition on the microstructural evolution and mechanical properties of (FeCoCrNi)100‐x(AlCu)x (x = 0, 5, 10, 15, 20; at%) high‐entropy alloys (HEAs). The results reveal that the microstructure evolves from coarse equiaxed to refined equiaxed, dendritic, and ultimately dual‐phase ...
Shunfu Xie +7 more
wiley +1 more source
对光触发晶闸管应用中使用较广泛的一种特种光纤进行了性能分析,对该光纤的芯层与包层的掺杂和包层/芯层直径比等关键光学特性进行了系统的研究,为光触发晶闸管寻找到性价比较优的特种光纤提供了参考。通过对比分析得出,在光触发晶闸管触发应用中,光纤设计类型为芯层直径200μm,包层直径250μm;采用阶跃折射率分布设计;芯层掺杂为锗氟共掺,芯层掺杂量为锗元素16mol%、氟元素5mol%;包层掺杂为氟元素,包层掺杂量为1mol%的光纤触发性能较优,适合光触发晶闸管的应用。
董朝阳 +7 more
doaj
研究了不同含量Ga3+掺杂对ZnO基压敏电阻微观结构,电学性能的影响。微观结构上,掺杂Ga3+没有对压敏电阻的相组成产生改变但抑制了氧化锌晶粒的生长,并使得尖晶石数量增多,尺寸减小;电学性能上,因为势垒下降和晶界电导率提高少量增加的Ga3+掺杂就显著增大了漏电流,降低了非线性,提高了压敏电阻的梯度。当Ga3+掺杂量增加到0.014 mol%时,压敏电阻在5 kA冲击下达到了最小残压比为1.72,此时电位梯度309.05 V/mm,非线性系数为18.0,漏电流为20μA。
江海波 +6 more
doaj
用晶体场理论研究了MgTiO3:Fe3+(Mn2+)的EPR参量D和掺杂晶体局域结构间的内在联系,计算值与实验值符合好.结果表明,掺杂后,MgTiO3:Fe3+和MgTiO3:Mn2+局域结构的畸变均趋向Oh对称,且MgTiO3:Fe3+的畸变程度大于MgTiO3:Mn2+.
LIFu-zhen(李福珍) +1 more
doaj +1 more source
ABSTRACT The development of efficient and stable bifunctional electrocatalysts is a key challenge for the industrialization of hydrogen production by water electrolysis. In this work, Co‐doped NiS/Ni3S2 heterostructured nanowire arrays (Co–NiS/Ni3S2 NA) were successfully constructed by precisely modulating the phase‐selective behavior of nickel ...
Xing‐Hang Liu +2 more
wiley +1 more source
使用固相反应法制备了不同浓度K+掺杂的CaCu3Ti4O12(CCTO)陶瓷试样,采用XRD、SEM、EDS、XPS、宽频介电谱仪对掺杂后的CCTO陶瓷的相结构、显微结构、晶粒与晶界内阳离子分布、阳离子氧化态、介电性能进行了表征,结果表明:K+优先替代了Ca2+形成受主掺杂。根据电荷守恒,晶粒内以生成氧空位为主,金属离子析出被抑制,此时晶粒尺寸趋于减小。当掺杂浓度超过6 mol%时,晶胞膨胀形成了Cu空位。介电性能的变化与点缺陷和显微结构的变化有关,K+掺杂后,晶粒尺寸先减小,然后随掺杂浓度的增加而增大。
曹壮, 成鹏飞, 宋江
doaj
ABSTRACT Platinum (Pt)‐based catalysts are crucial for the commercialization of hydrogen/metal air batteries, but they suffer from Pt scarcity, high cost, and nanoparticle dissolution/agglomeration, mainly leading to performance degradation. We address this by synthesizing a PtFe alloy catalyst (PtFe–PA–NC) via a phytic acid (PA) assisted pyrolysis ...
Chenyang Shu +9 more
wiley +1 more source
掺杂稀土氧化物可改变ZnO晶粒的尺寸,从而改变了等效偏析层的厚度,并分析了偏析层在导电过程中的作用。发现未掺杂试样的导电过程由晶界偏析层控制,而稀土氧化物Ce2O3、Y2O3掺杂后,由于晶粒尺寸的下降,试样的导电过程转变为界面态能级控制。因此对于多掺杂体系或小晶粒体系,应考虑偏析层对压敏陶瓷宏观的电气性能的影响。
成鹏飞, 王玉平
doaj
ABSTRACT Emerging as attractive alternatives for sustainable, low‐cost, and high‐performance electromagnetic interference (EMI) shielding, biomass‐derived carbon is nonetheless constrained by a limited repertoire of shielding mechanisms. Herein, a straightforward method was employed to synthesize self‐supporting Co nanoparticles embedded in porous N ...
Yingjie Xu +6 more
wiley +1 more source

