Results 51 to 60 of about 930 (217)

Performance and reliability in back-gated CVD-grown MoS2 devices [PDF]

, 2021
In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated.
Duffy, Ray, Galdón, José Carlos, Gamiz, Francisco Jesús, Gity, Farzan, Hurley, Paul, Márquez González, Carlos, Navarro Moral, Carlos, Salazar, Norberto   +7 more
core   +2 more sources

Ultra-low power 1T-DRAM in FDSOI technology

Microelectronic Engineering, 2017
A systematic study of a capacitorless 1T-DRAM fabricated in 28nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z2-FET memory cell features a large current sense margin and small OFF-state current at 25C and 85C.
El Dirani, H., Parihar, M.S., Lacord, J., Martinie, S., Barbe, J-Ch., Mescot, Xavier, Fonteneau, P., Broquin, J., Ghibaudo, G., Galy, Ph., Gamiz, F., Taur, Y., Kim, Y., Cristoloveanu, S., Bawedin, M., Lee, K.H.   +15 more
openaire   +4 more sources

Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

Advanced Electronic Materials, EarlyView.
This article presents a comprehensive co‐doping toolkit to optimize the performance and reliability of fluorite‐structure ferroelectrics like hafnium oxide. By employing homogeneous and heterogeneous co‐doping strategies, precise control over crystallization behavior, polarization hysteresis, and oxygen vacancy distribution is achieved.
Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar, Yannick Raffel, Ayse Sünbül, Anant Rastogi, Peter Reinig, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +10 more
wiley   +1 more source

Organic Transistor‐Based Neuromorphic Electronics and Their Recent Applications

Small Methods, EarlyView.
This review highlights recent progress in organic neuromorphic electronics, showing how organic semiconductors enable synaptic and neuronal functions with low power, mechanical flexibility, and biocompatibility. By bridging materials, devices, and systems, organic platforms are accelerating brain‐inspired computing toward applications in artificial ...
Ziru Wang, Feng Yan
wiley   +1 more source

Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

IEEE Open Journal of Nanotechnology, 2020
Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret).
Hyangwoo Kim, Hyeonsu Cho, Byoung Don Kong, Jin-Woo Kim, Meyya Meyyappan, Chang-Ki Baek   +5 more
doaj   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source

Nonvolatile Spintronic Memory Cells for Neural Networks

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
A new spintronic nonvolatile memory cell analogous to 1T DRAM with non-destructive READ is proposed. The cells can be used as neural computing units. A dual-circuit neural network architecture is proposed to leverage these devices against the complex ...
Andrew W. Stephan, Qiuwen Lou, Michael T. Niemier, Xiaobo Sharon Hu, Steven J. Koester   +4 more
doaj   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Thorough understanding of retention time of Z2FET memory operation [PDF]

, 2019
A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising candidate for capacitor-less dynamic random access memory (DRAM) memory cell. In the memory operation, data retention time determines refresh frequency and
Adamu-Lema, F., Asenov, A., Cheng, B., Duan, M., Gamiz, F., Georgiev, V.P., Millar, C., Navarro, C., Wang, X.   +8 more
core   +1 more source

Ferroelectric Properties of Polyvinylidene Fluoride (PVDF): Advances and Prospects for Emerging Applications

Macromolecular Chemistry and Physics, Volume 227, Issue 2, 29 January 2026.
This review surveys how PVDF's ferroelectric behavior emerges from structure, processing, and phase engineering, and how it translates into memory, neuromorphic, and sensing technologies. Performance is benchmarked against leading inorganic ferroelectrics, while composites and hybrid systems are discussed as routes to improved endurance and ...
Achidi Frick, David Schreuder, Alejandra Castro‐Chong, Elizabeth von Hauff   +3 more
wiley   +1 more source