Results 61 to 70 of about 930 (217)
Current-Mode Readout of Dynamic Random-Access Memories [PDF]
During the reading of one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM) cells, the need arises to amplify a small voltage difference (in the order of 30 to 100 mV) by a suitable sense amplifier.
doaj +1 more source
Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions
Neuromorphic computing reduces energy costs by integrating memory and processing in event‐driven architectures, achieving energy usage as low as 10–30 pJ per operation for memcapacitor‐based synapses. Memcapacitors are reviewed as strong contenders for neuromorphic computing, enhancing AI acceleration through charge‐based computations, high resistance,
Nada AbuHamra +4 more
wiley +1 more source
Capacitor-less 1T-DRAM as Synaptic Element for Online Learning [PDF]
MD Yasir Bashir +2 more
openalex +2 more sources
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio +2 more
wiley +1 more source
Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger +8 more
wiley +1 more source
The surging interest in quantum computing, space electronics, and superconducting circuits has led to new developments in cryogenic data storage technology.
Alam, Shamiul +3 more
core
Riboflavin‐Catalyzed Photoinduced Atom Transfer Radical Polymerization
PhotoATRP of methyl acrylate with riboflavin (RF) and CuBr2/Me6TREN as a dual catalytic system is successfully carried out under a green LED light. The process demonstrated high chain‐end fidelity, efficient oxygen tolerance, and controlled polymerization kinetics, driven primarily by reductive quenching of RF.
Halil Ibrahim Coskun +5 more
wiley +1 more source
Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
This review focuses on the device structure and working principle of hafnium oxide based ferroelectric memories, the preparation strategy of hafnium oxide based thin films and the method of optimizing ferroelectric memories performance. The effect of magnetron sputtering on ferroelectric properties of Hf0.5Zr0.5O2 thin films and its optimization ...
Kun Chen +4 more
wiley +1 more source
Assessment of Data Retainability of 2T DRAM for Processing‐In‐Memory Application
This study examines the influence of cell capacitance on data retention characteristics in dynamic random access memory (DRAM) cells composed of two transistors, in short, 2‐transistor (2T) DRAM. The 2T DRAM is gaining attention not only as a standalone memory technology but also as a critical component for processing‐in‐memory (PIM) applications ...
Ju Hong Min +4 more
wiley +1 more source
The Generation Rate Analysis of Different S/D Junction Engineering in Scaled UTBOX 1T-DRAM [PDF]
Talitha Nicoletti +6 more
openalex +3 more sources

