Results 71 to 80 of about 930 (217)

Tunnel Field Effect Transistors:from Steep-Slope Electronic Switches to Energy Efficient Logic Applications [PDF]

, 2015
The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications.
Biswas, Arnab
core   +1 more source

Fundamentals of Flexoelectricity, Materials and Emerging Opportunities Toward Strain‐Driven Nanocatalysts

Small, Volume 20, Issue 52, December 27, 2024.
This review examines flexoelectricity, a property where bending materials create electric charges. It explores how this effect can improve catalysts, especially at the nanoscale. The paper discusses measuring flexoelectricity and its advantages in catalysis, like reducing wasted energy.
Mieszko Kołodziej, Niwesh Ojha, Michał Budziałowski, Karol Załęski, Ignasi Fina, Yogendra Kumar Mishra, Kamal Kishore Pant, Emerson Coy   +7 more
wiley   +1 more source

Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase‐Change Memory Double‐Patterned Self‐Aligned Structure

physica status solidi (RRL) – Rapid Research Letters, Volume 18, Issue 10, October 2024.
The article addresses the interplay of phase‐change memory and ovonic threshold switching selectors in a novel double‐patterned self‐aligned architecture. A statistical analysis of programming, SET speed, reading, and cycling endurance is conducted. The viability of this technology is assessed on a kb‐sized array by comparing different distribution ...
Renzo Antonelli, Guillaume Bourgeois, Simon Martin, Valentina Meli, Niccoló Castellani, Antoine Salvi, Sylvain Gout, Mathieu Bernard, Pattamon Dezest, François Andrieu, Abdelkader Souifi, Gabriele Navarro   +11 more
wiley   +1 more source

Dynamic fine-grain body biasing of caches with latency and leakage 3T1D-based monitors [PDF]

, 2011
In this paper, we propose a dynamically tunable fine-grain body biasing mechanism to reduce active & standby leakage power in caches under process variations ...
Canal Corretger, Ramon, Ganapathy, Shrikanth, González Colás, Antonio María, Rubio Sola, Jose Antonio   +3 more
core   +2 more sources

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance [PDF]

, 2020
To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process, the
Cho, Min Su, Jang, Hwan Soo, Kang, In Man, Lee, Sang Ho, Seo, Jae Hwa   +4 more
core   +1 more source

Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing

Advanced Electronic Materials, Volume 10, Issue 7, July 2024.
Herein, stateful logic and arithmetic operations of silicon gated diodes are experimentally demonstrated for in‐memory computing. The proposed diode operates as a bistable two‐terminal switch and possess quasi‐volatile memory characteristics. The uniformity of their device characteristics overcomes the inherent stochastic characteristics of memristors ...
Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim   +3 more
wiley   +1 more source

Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque

Advanced Electronic Materials, Volume 10, Issue 6, June 2024.
Du et al. investigate all‐electrical switching of antiferromagnetic random‐access memory devices based on exchange bias. Through the incorporation of spin‐transfer torque, the critical switching current density for spin‐orbit torque achieves a notable 40% reduction.
Ao Du, Daoqian Zhu, Zhiyang Peng, Zongxia Guo, Min Wang, Kewen Shi, Kaihua Cao, Chao Zhao, Weisheng Zhao   +8 more
wiley   +1 more source

Caractérisation, mécanismes et applications mémoire des transistors avancés sur SOI [PDF]

, 2013
Ce travail présente les principaux résultats obtenus avec une large gamme de dispositifs SOI avancés, candidats très prometteurs pour les futurs générations de transistors MOSFETs.
CHANG, Sungjae, CRISTOLOVEANU, Sorin
core   +1 more source

Improvement in Retention Time of Capacitorless DRAM with Access Transistor

, 2019
In this paper, we propose a Junctionless (JL)/Accumulation Mode (AM) transistor with an access transistor (JL in series with JL/AM transistor) based capacitorless Dynamic Random Access Memory (1TDRAM) cell.
Ansari, Md. Hasan Raza, Member, Jawar Singh   +1 more
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