Results 31 to 40 of about 73,522 (251)
User interface evaluation of serious games for students with intellectual disability [PDF]
We have designed and evaluated around 10 serious games under the EU Leonardo Transfer of Innovation Project: Game On Extra Time (GOET) project http://goet-project.eu/.
Brown, DJ +4 more
core +1 more source
Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed.
Jun-Kyo Jeong +5 more
doaj +1 more source
Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hongsheng Hu +8 more
doaj +1 more source
Technology, Pedagogy and Digital Production: A Case Study of Children Learning New Media Skills [PDF]
This article presents an analysis of data from a project which investigated children and young people's learning of digital cultures in informal settings in Britain. The project aimed to build links between young peoples' leisure and learning experiences,
Willett, Rebekah
core +2 more sources
Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated.
Donghyun Go +6 more
doaj +1 more source
For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du +6 more
doaj +1 more source
Analysis of HBM Failure in 3D NAND Flash Memory
Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper. A catastrophic burn-out failure during HBM zapping is first presented. Analysis shows that NMOS fingers’
Biruo Song +6 more
openaire +1 more source
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae +2 more
doaj +1 more source
Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper.
Deepika Gupta +3 more
doaj +1 more source
Tunable charge-trap memory based on few-layer MoS2
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their
Jin, Yibo +8 more
core +1 more source

