Results 71 to 80 of about 529 (162)

Characterizing and Optimizing LDPC Performance on 3D NAND Flash Memories

ACM Transactions on Architecture and Code Optimization
With the development of NAND flash memories’ bit density and stacking technologies, while storage capacity keeps increasing, the issue of reliability becomes increasingly prominent. Low-density parity check (LDPC) code, as a robust error-correcting code, is extensively employed in flash memory.
Qiao Li 0001, Yu Chen, Guanyu Wu, Yajuan Du, Min Ye, Xinbiao Gan, Jie Zhang 0048, Zhirong Shen, Jiwu Shu, Chun Xue 0001   +9 more
openaire   +1 more source

Trade-off of Program Speed and Z-Interference According to Trap Position in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
This work proposes a distance-dependent trap model to overcome the limitations of conventional Technology Computer-Aided Design (TCAD) models, which fail to accurately represent the non-uniform charge distribution resulting from electron energy ...
Gyuhyeon Lee, Minseok Kim, Jesun Park, Seung Jae Baik, Myounggon Kang   +4 more
doaj   +1 more source

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using a Machine-Learning Method. [PDF]

Nanomaterials (Basel), 2022
Nam K, Park C, Yoon JS, Yun H, Jang H, Cho K, Kang HJ, Park MS, Sim J, Choi HC, Baek RH.   +10 more
europepmc   +1 more source

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. [PDF]

Micromachines (Basel), 2021
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.   +10 more
europepmc   +1 more source

A physics-guided surrogate modeling framework for RDF-dominated variability and bit-error rate analysis of 3D NAND flash memory

Discover Applied Sciences
Three-dimensional (3D) NAND flash memory has become the dominant non-volatile storage technology due to its high density and scalability. However, aggressive vertical stacking introduces significant threshold-voltage (VT) variability that affects device ...
Dikendra Kumar Verma, Anurag Vidyarthi, Upendra Mohan Bhatt   +2 more
doaj   +1 more source

A String-Select-Line Separation Patterning Scheme for Low Voltage and High-Speed Program Operation in 3D NAND Flash Memory With Separated Source-Line

IEEE Access
In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL).
Jae-Min Sim, Hakyeong Kim, Yun-Heub Song
doaj   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Ultra-high bit density liquid-state colloidal memory

Memories - Materials, Devices, Circuits and Systems
Despite the historical growth of storage technologies, such as 3D NAND flash, hard disk drives, and tape storage, each of them is facing inherent scaling limitations. 3D NAND flash suffers from rising costs due to the complex 3D fabrication process.
Bing-Yang Shih, Senne Fransen, Radin Tahvildari, Vasu Siddeswara Kalangi, Kherim Willems, Devin Verreck, Farrukh Yasin, Iuliana Rachita, Pol Van Dorpe, Geert Van den Bosch, Antonio Arreghini, Maarten Rosmeulen, Willem Van Roy   +12 more
doaj   +1 more source

A Study of Invalid Programming in 3D QLC NAND Flash Memories

Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems, 2023
Hongyang Dang, Xiangyu Yao, Zheng Wan, Qiao Li 0001   +3 more
openaire   +1 more source

Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage. [PDF]

Nanoscale Adv
Zhou R, Kim IJ, Park S, Kwon H, Lee JS.
europepmc   +1 more source