Results 71 to 80 of about 1,894,725 (194)
Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires
Small, EarlyView.Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez +14 more
wiley +1 more source
Charge‐Domain In‐Memory Computing With NAND‐Compatible Ferroelectric Memcapacitor Crossbar
Small, EarlyView.A NAND‐compatible ferroelectric memcapacitor crossbar enables charge‐domain in‐memory computing through displacement‐current‐based readout with strongly suppressed static conduction. The platform combines reliable multilevel programmability, linear vector–matrix multiplication, and 3D‐scalable operation, while supporting hardware‐assisted image ...
Hwiho Hwang +4 more
wiley +1 more source
COTS 3D NAND Flash: SEE Test Results and Challenges [PDF]
, 2018 Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testing challenges and near-term plans for a broad survey of currently-available product ...
Campola, Michael +2 more
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e-Prime: Advances in Electrical Engineering, Electronics and EnergyData storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma +2 more
doaj +1 more source
Advanced Materials, Volume 38, Issue 58, 16 October 2026.Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo +5 more
wiley +1 more source
A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation
Advanced Science, Volume 13, Issue 56, 9 October 2026.A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu +6 more
wiley +1 more source
Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]
, 2009 Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M. +4 more
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Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing
Journal of Microelectronic Manufacturing, 2020 3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio.
Wei Zhang +4 more
doaj +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Flash-memories in Space Applications: Trends and Challenges [PDF]
, 2009 Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M. +4 more
core