Results 61 to 70 of about 1,894,725 (194)

Characterizing 3D Charge Trap NAND Flash: Observations, Analyses and Applications

, 2018
In the 3D era, the Charge Trap (CT) NAND flash is employed by mainstream products, thus having a deep understanding of its characteristics is becoming increasingly crucial for designing flash-based systems. In this paper, to enable such understanding, we
Yue Zhu, You Zhou, Fei Wu, Zhou, You,, Weizhen Kong, Xiong, Qin,, Kong, Weizhen,, Wu, Fei,, Changsheng Xie, Xie, Changsheng,, Zhonghai Lu, Lu, Zhonghai,, Qin Xiong, Zhu, Yue,   +13 more
core   +1 more source

Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors

Advanced Science, EarlyView.
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer, Juan P. Martinez, Yuxuan He, Giulio Galderisi, Katrin Pingen, Eduardo Sergio Oliveros‐Mata, Lisa Tellis, Cigdem Cakirlar, Christoph Beyer, Brojogopal Sapui, Joachim Knoch, Klaus Hofmann, Sandro Carrara, Eugenio Cantatore, Max C. Lemme, Ian O'Connor, Akash Kumar, Andre Heinzig, Thomas Mikolajick, Walter M. Weber   +19 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

NAND Flash Memory Organization and Operations

, 2015
NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density.
Kuchta, Radek, Novotný, Radovan, Kadlec, Jaroslav   +2 more
core   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

NAND Flash Physical Unclonable Functions: A Comprehensive Review of Disturb Mechanisms and Extraction Strategies

IEEE Access
NAND flash memory has emerged as a compelling platform for intrinsic security primitives because of its widespread use, scalable architecture, and rich device-level variability.
Pyi Phyo Aung, Wei Liang Lim, Chia Yee Ooi   +2 more
doaj   +1 more source

Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory

IEEE Access, 2023
When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
doaj   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Vertical NAND Flash Memory‐Based Bayesian Neural Networks With Intrinsic Gaussian Weight Sampling

Advanced Intelligent Systems, EarlyView.
Commercial vertical NAND flash memory supports Bayesian neural networks by using paired cells to produce bell‐shaped weight distributions. Read voltage controls their spread without additional memory cells or changes to the array structure. Simulations based on device measurements demonstrate improved uncertainty estimation and accuracy gains of up to ...
Sung‐Ho Park, Mingyun Oh, Dongbeen Shin, Jaehyeon Kim, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source