Results 61 to 70 of about 529 (162)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Magnetic Field‐Modulated Boolean Logic in Proteinoid‐ Fe3 O4 Hybrid Materials

Advanced Physics Research, Volume 5, Issue 5, May 2026.
Proteinoid‐Fe3O4${\rm Fe}_3{\rm O}_4$. nanoparticle composites exhibit spontaneous electrical oscillations that emulate Boolean logic gates (AND, OR, XOR, NAND, NOR, NOT) under magnetic field modulation. External fields of 65.103 mT tune oscillatory behavior: 84 mT enhances amplitude while 103 mT suppresses it.
Panagiotis Mougkogiannis, Andrew Adamatzky   +1 more
wiley   +1 more source

Molecular Design Toward High‐Performance Solution‐Processable Push–Pull Zinc(II) Porphyrin‐Based Resistive Memory Devices: From Binary to Ternary Memory Behavior

Small Science, Volume 6, Issue 5, May 2026.
A series of zinc(II) porphyrin‐based D−A complexes is employed to fabricate solution‐processable resistive memory devices. The utilization of an electron‐donating π‐bridge or a weak electron‐donating moiety is able to turn on an extra resistive state to realize ternary memory performance, demonstrating the relationship between memory behavior and ...
Ka Wai Kwong, Hing Chan, Ming‐Yi Leung, Eugene Yau‐Hin Hong, Shiu‐Lun Lai, Vivian Wing‐Wah Yam   +5 more
wiley   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi   +2 more
doaj   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, Volume 36, Issue 29, 9 April 2026.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

Silicon-Richness Impact for Enhanced Charge-Trapping in 3-D NAND Flash Memories

IEEE Journal of the Electron Devices Society
We propose an optimization of N/Si ratio of charge trap silicon nitride (CT-SiN) for 3D NAND flash memory applications. By resorting to density functional theory (DFT) calculations and experimental analyses, we studied the properties influencing SiN ...
Tomoya Nagahashi, Atsushi Oshiyama, Mauro Boero, Hajime Karasawa, Ryota Horiike, Kenji Shiraishi   +5 more
doaj   +1 more source

A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
Jia J, Jin L, Jia X, You K.
europepmc   +1 more source

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source