Results 61 to 70 of about 1,615,195 (156)

Characterizing 3D Floating Gate NAND Flash

, 2017
In this paper, we characterize a state-of-the-art 3D floating gate NAND flash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various ...
Yue Zhu, You Zhou, Fei Wu, Zhonghai Lu, Qin Xiong, Yibing Chu, Changsheng Xie, Ping Huang   +7 more
core   +1 more source

Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer

Nanomaterials, 2023
Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture.
Hongsheng Hu, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +8 more
doaj   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Reliability of 3D NAND Flash Memories

, 2016
In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances.
C. Zambelli, P. Olivo, A. Grossi, ZAMBELLI, Cristian, OLIVO, Piero, GROSSI, Alessandro   +5 more
core   +1 more source

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Characterizing 3D Charge Trap NAND Flash: Observations, Analyses and Applications

, 2018
In the 3D era, the Charge Trap (CT) NAND flash is employed by mainstream products, thus having a deep understanding of its characteristics is becoming increasingly crucial for designing flash-based systems. In this paper, to enable such understanding, we
Yue Zhu, You Zhou, Fei Wu, Zhou, You,, Weizhen Kong, Xiong, Qin,, Kong, Weizhen,, Wu, Fei,, Changsheng Xie, Xie, Changsheng,, Zhonghai Lu, Lu, Zhonghai,, Qin Xiong, Zhu, Yue,   +13 more
core   +1 more source

3D NAND-технология для изготовления flash-памяти [PDF]

, 2019
В работе приведен краткий обзор процесса развития микроэлектроники, рассмотрены возможности и перспективы использования 3D NAND-технологии для изготовления flash -памяти и других средств электронной и вычислительной ...
Котов, Е. Г.
core   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Nitrogen‐Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade‐Off for 1S–1R Phase‐Change Memory

Small, Volume 22, Issue 53, 21 September 2026.
This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang, Jong Min Joo, Jun Young Choi, Ji Eun Park, Dong Hyun Kim, Jin Suk Oh, Tae Geun Kim   +6 more
wiley   +1 more source