Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]
Wang J, Fan Y, Du Y, Huang S, Wan Y.
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Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory. [PDF]
Ko J +9 more
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Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]
Fernandes L +20 more
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Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection. [PDF]
Kim M +6 more
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TiO<sub>2</sub> nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]
Kang H +11 more
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Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems. [PDF]
Kim G +12 more
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Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Kang HY +4 more
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MoS<sub>2</sub> Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems. [PDF]
Kim KH +7 more
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Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]
Zhou Z +9 more
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Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]
Song I, Kim J, Lee S, Myeong I.
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