Results 81 to 90 of about 5,453 (181)
Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source
Advanced Science, Volume 13, Issue 15, 13 March 2026.Magnesium silicide (Mg2Si) is introduced as a narrow‐bandgap, biodegradable semiconductor for transient electronics. RF‐sputtered and annealed Mg2Si thin films show high intrinsic electrical conductivity and low thermal conductivity. The polycrystalline material undergoes hydrolysis in aquatic and composting environments with minimal cytotoxicity ...
Ji‐Woo Gu +17 more
wiley +1 more source
e-Prime: Advances in Electrical Engineering, Electronics and EnergyData storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma +2 more
doaj +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND
IEEE Access, 2020 3D NAND is a great architectural innovation in the field of flash memory. The staircase for control gate is a unique and important process in the manufacturing of 3D NAND.
Peizhen Hong +7 more
doaj +1 more source
Boosting the Performance of 3D Charge Trap NAND Flash with Asymmetric Feature Process Size Characteristic [PDF]
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Chen, Shuo Han
core
Enhancing the environmental sustainability of IT [PDF]
, 2009 Emerging technologies for learning report - Article exploring green ...
Ohara, Dave, Steven, Anthony
core
A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 Jia J, Jin L, Jia X, You K.
europepmc +1 more source
Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
europepmc +1 more source
IEEE AccessFor the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj +1 more source