Results 81 to 90 of about 1,894,725 (194)
Advanced Physics Research, Volume 5, Issue 9, September 2026.Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee +3 more
wiley +1 more source
NAND Flash Memory Characterization [PDF]
, 2019 The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology.
Heer, Tanvir Singh
core +1 more source
Novel Pattern-Centric Solution for XtackingTM AFM Metrology
Journal of Microelectronic Manufacturing, 2019 3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang +6 more
doaj +1 more source
Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration
Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu +10 more
wiley +1 more source
The future of 3D NAND flash technology
3D NAND flash has become the foundational non-volatile storage platform of the AI era, underpinning workloads from model training to large-scale inference and cold data archival. With roadmaps now targeting kilolayer stacks and tens of trillions of devices per die, scaling is no longer governed primarily by process integration or lithography.
Venkatesan, Prasanna +14 more
openaire +2 more sources
NAND flash memory technologies
, 2016 This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future ...
Aritome, Seiichi
core
IEEE Journal of the Electron Devices SocietyRandom telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj +1 more source
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory [PDF]
, 2017 We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Ladbury, Raymond +6 more
core
Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory [PDF]
, 2017 We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage ...
LaBel, Kenneth +6 more
core
An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash
, 2018 Owing to the fast-growing demands of larger and faster NAND flash devices, new manufacturing techniques have accelerated the down-scaling process of NAND flash memory.
Yu-Pei Liang +5 more
core +1 more source