Results 1 to 10 of about 2,098 (165)

Random Telegraph Noise in 3D NAND Flash Memories [PDF]

Micromachines, 2021
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli, Gerardo Malavena, Andrea L. Lacaita, Christian Monzio Compagnoni   +3 more
doaj   +5 more sources

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]

Micromachines, 2021
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli, Cristian Zambelli, Alessia Marelli, Rino Micheloni, Piero Olivo   +4 more
doaj   +5 more sources

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories [PDF]

Micromachines, 2021
Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen, Bo Chen, Hongzhe Lin, Yachen Kong, Xin Liu, Xuepeng Zhan, Jiezhi Chen   +6 more
doaj   +2 more sources

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories [PDF]

Micromachines, 2021
We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements.
Sivaramakrishnan Ramesh, Arjun Ajaykumar, Lars-Åke Ragnarsson, Laurent Breuil, Gabriel Khalil El Hajjam, Ben Kaczer, Attilio Belmonte, Laura Nyns, Jean-Philippe Soulié, Geert Van den bosch, Maarten Rosmeulen   +10 more
doaj   +2 more sources

Architectural and Integration Options for 3D NAND Flash Memories [PDF]

Computers, 2017
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni, Luca Crippa, Cristian Zambelli, Piero Olivo   +3 more
doaj   +3 more sources

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +2 more sources

Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement. [PDF]

Small Sci
The Pt/Ta2O5/Nb2O5−x/Au nanoparticles/Al2O3−y/Ti charge trap memristor (CTM) demonstrates faster and energy‐efficient operation compared to its counterpart without Au nanoparticles. This improvement is attributed to the synergistic effects of localized electric field enhancement and optimized electron trapping via band engineering. The findings present
Kim G, Park J, Park W, Ko M, Lee MG, Cho H, Kim KM.   +6 more
europepmc   +2 more sources

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Computers, 2017
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Alessandro Sottocornola Spinelli, Christian Monzio Compagnoni, Andrea L Lacaita   +2 more
exaly   +3 more sources

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]

Micromachines (Basel)
With vertical stacking, 3D NAND’s flash memory can achieve continuous capacity growth. However, the endurance variation between the stacked layers becomes more and more significant due to process variation, which will lead to the underutilization of many pages and seriously affect the lifetime of 3D NAND’s flash memory.
Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc   +4 more sources

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

IEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj   +1 more source