Novel Pattern-Centric Solution for XtackingTM AFM Metrology
Journal of Microelectronic Manufacturing, 2019 3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang +6 more
doaj +1 more source
Reliable and energy-efficient 3D NAND flash storage system design using run-time device and system interaction [PDF]
, 2023 NAND Flash memory is a non-volatile solid-state data storage technology widely used in electronic devices such as smartphones, tablets, laptops, digital cameras, USB drives, solid-state drives (SSDs), autonomous vehicles, space applications, and data ...
Raquibuzzaman, Md
core +1 more source
Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage [PDF]
, 2014 We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET.
Asenov, Asen +5 more
core +3 more sources
DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability [PDF]
, 2017 To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Mittal, Sparsh +2 more
core +3 more sources
Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers [PDF]
, 2015 NAND flash memories are becoming the predominant technology in the implementation of mass storage systems for both embedded and high-performance applications.
Carlo S. Di +19 more
core +2 more sources
Coding scheme for 3D vertical flash memory
, 2015 Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction.
Bandic, Zvonimir +4 more
core +1 more source
Nonvolatile memory with molecule-engineered tunneling barriers
, 2008 We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion.
Baik S. J. +10 more
core +1 more source
uFLIP-OC: Understanding Flash I/O Patterns on Open-Channel Solid State Drives [PDF]
, 2017 International audienceSolid-State Drives (SSDs) have gained acceptance by providing the same block device abstraction as magnetic hard drives, at the cost of suboptimal resource utilisation and unpredictable performance.
Bjørling Matias +5 more
core +3 more sources
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, EarlyView.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source