Results 141 to 150 of about 261,592 (260)

Non-Destructive Evaluation of Damage and Electricity Characteristics in 4H-SiC Induced by Ion Irradiation via Raman Spectroscopy. [PDF]

Materials (Basel)
Dai H, Hou Z, Han X, Liang J, Jiao A, Wei Z, Wu C, Sun K, Liu Y, Wang X.   +9 more
europepmc   +1 more source

IBIL Measurement and Optical Simulation of the D_I Center in 4H-SiC. [PDF]

Materials (Basel), 2023
Jiang W, Cheng W, Qiu M, Wu S, Ouyang X, Chen L, Pang P, Ying M, Liao B.   +8 more
europepmc   +1 more source

Modified divacancies in 4H-SiC

Modified divacancies in 4H-SiC
Divacancies near or at lattice defects in SiC, the PL5?PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
openaire  

Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics. [PDF]

Sensors (Basel)
Gsponer A, Onder S, Gundacker S, Burin J, Knopf M, Radmanovac D, Waid S, Bergauer T.   +7 more
europepmc   +1 more source

A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure. [PDF]

Micromachines (Basel)
Zhou Y, Du F, Song Q, Tang X, Yuan H, Han C, Zhang C, Zhang Y.   +7 more
europepmc   +1 more source

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET. [PDF]

Micromachines (Basel), 2023
Nie X, Wang Y, Yu C, Fei X, Yang J, Li X.   +5 more
europepmc   +1 more source

Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method

, 2015
Xi Liu, Shi-Yi Zhuo, Pan Gao, Wei Huang, Chengfeng Yan, Er‐Wei Shi   +5 more
openalex   +1 more source

Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]

Micromachines (Basel)
Dhyani M, Singh S, Tzhayek N, Bernstein JB.   +3 more
europepmc   +1 more source

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties. [PDF]

J Appl Crystallogr, 2023
Roder M, Steiner J, Wellmann P, Kabukcuoglu M, Hamann E, Haaga S, Hänschke D, Danilewsky A.   +7 more
europepmc   +1 more source

Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates

, 2009
K. Grodecki, Aneta Drabińska, R. Bożek, A. Wysmołek, K.P. Korona, Włodek Strupiński, J. Borysiuk, R. Stępniewski, Jacek Baranowski   +8 more
openalex   +1 more source