Results 141 to 150 of about 19,738 (219)

Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector. [PDF]

Materials (Basel)
Mancuso AS, Sangregorio E, Muoio A, De Luca S, Kushoro MH, Gallo E, Vanellone S, Quadrivi E, Trotta A, Calcagno L, Via F.   +10 more
europepmc   +1 more source

Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors. [PDF]

Nanomaterials (Basel)
Zeng YX, Huang W, Ma HP, Zhang QC.
europepmc   +1 more source

Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel)
Bai Z, Ding C, Guo Y, Luo M, Zhou Z, Gu L, Zhang Q, Ma H.   +7 more
europepmc   +1 more source

Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers. [PDF]

Nanomaterials (Basel)
Wang Z, Bai Z, Guo Y, Ding C, Huang Q, Gu L, Shen Y, Zhang Q, Ma H.   +8 more
europepmc   +1 more source

Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments. [PDF]

Microsyst Nanoeng
Wang L, Wan N, Yang Y, Wang Y, Zhao Y, Zhu J, Yang M, Lyu Y, Liu M, Zhao Y.   +9 more
europepmc   +1 more source

Mechanism of OH*-Modified 4H-SiC Surface with Scratches Based on ReaxFF MD Simulation. [PDF]

Micromachines (Basel)
Yan D, Huang H, Xue M, Duan N.
europepmc   +1 more source

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]

Nanomaterials (Basel)
Wang P, Li C, Deng C, Yang Q, Xu S, Tang X, Wang Z, Tao W, Tao N, Wang Q, Yu H.   +10 more
europepmc   +1 more source

Effects of High-Temperature Treatments in Inert Atmosphere on 4H-SiC Substrates and Epitaxial Layers. [PDF]

Materials (Basel)
Migliore F, Cannas M, Gelardi FM, Pasquali F, Brischetto A, Vecchio D, Pirnaci MD, Agnello S.   +7 more
europepmc   +1 more source