Results 181 to 190 of about 19,738 (219)

High power 4H-SiC thyristors

1996 54th Annual Device Research Conference Digest, 2002
For very high voltage, high current devices (>3 kV, >100 A), the use of bipolar SiC devices will be required because of their much higher current densities. These devices have applications in the area of traction control and power transmission. In this report, higher voltage and higher current npnp 4H-SiC thyristors have been achieved.
J.W. Palmour, R. Singh, D.G. Waltz
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Optical properties of 4H–SiC

Journal of Applied Physics, 2002
The optical band gap energy and the dielectric functions of n-type 4H–SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method.
R. Ahuja, A. Ferreira da Silva, C. Persson, J. M. Osorio-Guillén, I. Pepe, K. Järrendahl, O. P. A. Lindquist, N. V. Edwards, Q. Wahab, B. Johansson   +9 more
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High Mobility 4H-SiC MOSFET

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018
Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility ...
A. O'Neill, F. Arith, J. Urresti, K. Vasilevskiy, N. Wright, S. Olsen   +5 more
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4H-SiC High Temperature Spectrometers

Materials Science Forum, 2007
The detector structures based on Al ion-implanted p+-n junctions in 4H-SiC have been manufactured and tested at temperatures up to 170oC by α-particles with energies of 3.9 and 5.5 MeV. Structural peculiarities of thin Al high dose ion implanted layers before and after short high temperature activation annealing were studied by combination of ...
Evgenia V. Kalinina, Nikita B. Strokan, Alexander M. Ivanov, A. Sadohin, A. Azarov, V. Kossov, R. Yafaev, S. Lashaev   +7 more
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Positronium formation at 4H SiC(0001) surfaces

Journal of Physics: Condensed Matter, 2020
Abstract Positronium formation at 4H SiC(0001) surfaces were investigated upon the removal of natural oxide layers by hydrofluoric acid etching and heat treatment at 1000 K in ultra-high vacuum. Two types of positronium were observed in the positronium time-of-flight (PsTOF) measurements irrespective of conduction type and surface ...
A Kawasuso, K Wada, A Miyashita, M Maekawa, H Iwamori, S Iida, Y Nagashima   +6 more
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Selective 4H-SiC UV Detectors

Materials Science Forum, 2013
Carcinogenic (bactericidal) radiation (λ = 200–300 nm with a peak at 254 nm) is present in natural (Sun) and artificial (lamps) source of UV radiation. Its intensity is very low as compared to other types of radiation, but it strongly affects the health of human beings.
Evgenia V. Kalinina, O. Konstantinov, A.A. Lebedev, Yu. Gol’dberg   +3 more
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Neutron Irradiation of 4H SiC

Materials Science Forum, 2001
The effect of neutron irradiation on 4H SiC epitaxial layers are studied. Several different doses of both fast and thermal neutrons have been used and the samples have been annealed from 500 degreesC to 2000 degreesC. The defect concentration dependence on the fast neutron flux and on the annealing temperature is investigated.
F.H.C. Carlsson, L. Storasta, Björn Magnusson, Peder Bergman, K. Sköld, Erik Janzén   +5 more
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Demonstration of a 4H SiC betavoltaic cell

Applied Physics Letters, 2006
A betavoltaic cell in 4H SiC is demonstrated. A p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.72V and a short circuit current density of 16.8nA∕cm2 were measured in a single p-n junction. A 6% lower bound on the power conversion efficiency was obtained.
M.V.S. Chandrashekhar, Christopher I. Thomas, Hui Li, Michael G. Spencer, Amit Lal   +4 more
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4H SiC Epitaxial Growth with Chlorine Addition

Chemical Vapor Deposition, 2006
AbstractThe growth rate of a 4H‐SiC epitaxial layer has been increased by a factor of 19 (up to 112 μm h–1) with respect to the standard process, with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl has been characterized by electrical, optical, and structural characterization methods.
F. LA VIA, G. GALVAGNO, G. FOTI, M. MAUCERI, S. LEONE, G. PISTONE, G. ABBONDANZA, VENERONI, ALESSANDRO, MASI, MAURIZIO, G. L. VALENTE, D. CRIPPA   +10 more
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Physical Modelling of 4H-SiC PiN Diodes

Materials Science Forum, 2012
With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization
Craig A. Fisher, Michael R. Jennings, Angus T. Bryant, Amador Pérez-Tomás, Peter Michael Gammon, Pierre Brosselard, Philippe Godignon, Philip Andrew Mawby   +7 more
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