Results 181 to 190 of about 261,592 (260)

Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna. [PDF]

Nano Lett
Körber J, Heiler J, Fuchs P, Flad P, Hesselmeier E, Kuna P, Ul-Hassan J, Knolle W, Becher C, Kaiser F, Wrachtrup J.   +10 more
europepmc   +1 more source

A Novel Approach for Analysis of Rocking Curve X-Ray Diffraction Imaging Data (RC-XRDI) on 4H-SiC Using Cumulative Integrated Intensity (CII) Method. [PDF]

J Electron Mater
Estiri A, Bytheway R, Lafford TA, Fox OJL, Graham A, Hurley C, Shah VA.   +6 more
europepmc   +1 more source

Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors. [PDF]

Materials (Basel)
Jang T, Byeon M, Kang M, Lee SG, Lee JH, Lee SG, Min WJ, Hong TE.   +7 more
europepmc   +1 more source

Study of ZrO₂ Gate Dielectric with Thin SiO₂ Interfacial Layer in 4H-SiC Trench MOS Capacitors. [PDF]

Materials (Basel)
Huang Q, Guo Y, Wang A, Bai Z, Gu L, Wang Z, Ding C, Shen Y, Ma H, Zhang Q.   +9 more
europepmc   +1 more source

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth. [PDF]

Materials (Basel)
Yang S, Guo N, Zhao S, Li Y, Wei M, Zhang Y, Liu X.   +6 more
europepmc   +1 more source

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC. [PDF]

RSC Adv
Jiang S, Li Y, Zhang Y, Chen C, Chen Z, Zhu W, He H, Wang X.   +7 more
europepmc   +1 more source

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC. [PDF]

RSC Adv
Guo N, Pei Y, Yuan W, Li Y, Zhao S, Yang S, Zhang Y, Liu X.   +7 more
europepmc   +1 more source

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC. [PDF]

Micromachines (Basel)
Yuan W, Pei Y, Li Y, Guo N, Zhang X, Liu X.   +5 more
europepmc   +1 more source