Results 191 to 200 of about 637,262 (217)
Some of the next articles are maybe not open access.
Dopant ion implantation simulations in 4H-Silicon Carbide
Modelling and Simulation in Materials Science and Engineering, 2004Many modern semiconductor fabrication techniques employ ion implantation technology to produce doped device structures. In some cases, implanted structures are used as an adjunct to standard commercial processes of thermal diffusion. The incorporation of dopants into 4H-Silicon Carbide requires the exclusive use of ion implantation technology ...
openaire +2 more sources
Hexagonal Silicon Carbide (2H-, 4H-, and 6H-SiC)
1999Of all the poly types, 6H is by far the most commonly occurring modification in commercial SiC. The next most common polytypes are 15R and 4H, respectively. SiC also crystallizes in the wurtzite structure (2H-SiC). Assuming that the 3C and 2H structures are extremes in the parameter describing the percentage of hexagonal close packing (often called ...
openaire +1 more source
One step co-sintering of silicon carbide ceramic membrane with the aid of boron carbide
Journal of the European Ceramic Society, 2021Peng Wang, Guangwu Wen, peiling Gao
exaly
Defects and carrier lifetime in 4H-Silicon Carbide
2018Kallinger, Birgit +5 more
openaire +1 more source
Microwave Chemistry in Silicon Carbide Reaction Vials: Separating Thermal from Nonthermal Effects†
Angewandte Chemie - International Edition, 2009Bernhard Gutmann +2 more
exaly
Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties
Advanced Materials, 2000Ning Wang, S -T Lee, C -S Lee
exaly